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Microchip SST26LF064RT 64-Mbit Radiation Tolerant

The SST26LF064RT 64-Mbit Radiation Tolerant Serial Quad I/O (SQI) Flash

Microchip SST26LF064RT 64-Mbit Radiation Tolerant front side of the chip

The SST26LF064RT is a Radiation Tolerant Serial Quad I/O™ (SQI™) flash device using 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices.

SST26LF064RT also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Operating at frequencies of 80 MHz, the SST26LF064RT enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM.

The device’s high performance and reliability make it the ideal choice for Space and Hirel applications. Further benefits are achieved with SST’s proprietary, high-performance CMOS SuperFlash® technology, which significantly improves performance and reliability, and lowers power consumption for high bandwidth, compact designs.

The SST26LF064RT default at power up is with WP# and HOLD pins enable and SIO2 and SIO3 pins disable allowing for SPI protocol operations without register configuration.

 

Features 

  • Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure: Mode 0 and Mode 3
  • x1/x2/x4 Serial Peripheral Interface (SPI) Protocol and SQI protocol
  • Burst Modes- Continuous linear burst, 8/16/32/64 Byte linear burst with wrap-around
  • Page-Program- 256 Bytes per page in x1 or x4 mode
  • Flexible Erase Capability- Uniform 4 KByte sectors, Four 8 KByte top and bottom parameter overlay blocks, One 32 KByte top and bottom overlay block, Uniform 64 KByte overlay blocks
  • Software Write Protection- Individual Block-Locking: 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks
  • Low Power Consumption: Active Read current: 15 mA (typical @ 104 MHz), Standby Current: 15 µA (typical)
  • Serial Flash Discoverable Parameters (SFDP)
  • Voltage
    • Single Voltage Read and Write Operations 3.0-3.6V
  • Radiation Performances
    • No Single Event Latch-up Below a LET Threshold of 78 MeV.cm2 /mg @125°C
    • Total ionizing dose : 50 krad(Si) (biased and Unbiased) in reading mode
  • Temperature Range 
    • -55ºC to +125ºC
  • Packages 
    • 8-lead SOIJ
    • 8-lead Ceramic Dual Flat Pack (CDFP)

 

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