Infineon CoolSiC™ JFET — Enabling Next-Generation Solid-State Power Distribution

Upgrade protection and switching architectures with CoolSiC™ JFET technology designed for robust, efficient solid-state solutions — supported jointly by EBV Elektronik and Infineon.
 

Why Solid-State Power Distribution

The transition to digitalized power distribution demands a new generation of protection devices, with solid-state circuit breakers (SSCBs) leading the way. Modern power systems are shifting from mechanical switching to solid-state architectures to achieve faster, smarter, and more controllable protection. Infineon’s CoolSiC™ JFET technology rises to this challenge by combining the advantages of silicon carbide with innovative packaging and advanced chip design—delivering unmatched efficiency, robustness, and reliability for the most demanding next-generation power distribution.
 

Why CoolSiC™ JFET from Infineon

Infineon’s CoolSiC™ JFET technology is designed to meet the growing demand for high-performance, solid-state power distribution and protection—especially in rapidly evolving environments such as AI data centers and advanced industrial systems.

With an expanding portfolio covering 750 V and 1200 V classes, CoolSiC™ JFET enables system designers to push efficiency and reliability to the next level. Extremely low on-resistance values—down to 1.6 mΩ—help minimize conduction losses, making the devices ideal for high-current applications while enabling drop-in replacement of existing SiC MOSFET designs without requiring PCB redesign.

Infineon’s advanced .XT interconnection technology ensures improved thermal performance and high robustness under pulsed and cyclic loads. This makes them highly reliable even under overload and fault conditions.

Compared to electromechanical solutions, CoolSiC™ JFET-based solid-state designs enable higher switching speeds. This allows rapid fault isolation, reduces system damage risk, minimizes downtime, and contributes to longer system lifetime—key advantages for mission-critical applications.

Overall, Infineon’s CoolSiC™ JFET combines:

• High efficiency with minimized conduction and switching losses
• Robust operation in harsh electrical and thermal environments
• Fast, reliable solid-state protection
• Flexible integration thanks to broad package and configuration options
   

Interview

Leo Aichriedler from Infineon briefly explains the motivation behind introducing power electronics into power distribution and the role SiC JFETs play.
 

Target Applications

CoolSiC™ JFET is designed for next-generation solid-state power architectures where speed, efficiency, and reliability are critical. 

• AI data centers: Enables efficient and reliable power distribution in PSUs, PBUs, IBC stages, and hot-swap or eFuse designs—supporting high power density and uptime.
• Solid-state protection: Ideal for SSCBs, electronic relays, and smart power distribution systems, replacing mechanical solutions with faster, more reliable switching.
• Industrial power systems: Supports battery management, disconnect switches, and high-current distribution applications requiring both robust conduction and rapid fault isolation.

A Novel SiC JFET Technology for Solid State Power Distribution

Live Recording: Keynote speech at PCIM Nuremberg, Germany, 2026

Speaker: Leo Aichriedler, Distinguished Engineer Application Marketing at Infineon Technologies

Content overview 

• Introduction to Emerging Power Distribution Schemes
• Silicon Carbide JFET Technology for SSCB Applications
• Practical Application Measurements and Performance Demonstration

Watch this full keynote recording to see how Infineon is redefining new, emerging low-voltage (< 1000VAC and < 1500VDC) power distribution schemes. The schemes require fast acting circuit protection devices, typically implemented as solid state circuit breakers (SSCB). In contrast to conventional electro-mechanical breakers, SSCBs comprise semiconductor power switches enabling the interruption of faulted circuits within sub-Micro second range. The employed power switch has to support low conduction losses during normal operation while being capable of handling extreme overvoltage and overcurrent / short circuit events in a reliable manner.

Addressing these specific requirements, an application-tailored Silicon Carbide JFET technology in combination with optimized discrete packaging enables ultra-low R_DSon (1m@ - 5m@ at 750V - 1.2kV VBDss) power devices. Starting from key requirements of SSCB applications, the presentation will focus on the specific features of the new JFET technology and demonstrate the performance by practical application measurements.

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