Vishay SQRS518EP-T1_GE3
High-performance automotive 100 V MOSFET delivering efficient and reliable power switching for demanding vehicle applications
The Vishay Siliconix SQRS518EP-T1_GE3 is an automotive-grade 100 V N-channel power MOSFET based on Vishay’s advanced TrenchFET® Gen V technology. Designed for demanding automotive power applications, it combines low conduction losses with reliable switching performance in a compact PowerPAK® SO-8SW package.
With a maximum RDS(on) of 7.4 mΩ at 10 V, continuous drain current up to 58 A, and an operating junction temperature range from-55 °C to +175 °C, the SQRS518EP supports efficient and robust power designs.
The device is AEC-Q101 qualified and 100% Rg and UIS tested, providing the quality and reliability required for automotive electronic systems.
Key features
- 100 V N-Channel TrenchFET® Gen V power MOSFET
- Low RDS(on): max. 7.4 mΩ at VGS = 10 V for reduced conduction losses
- High current capability: up to 58 A and operating temperature up to +175 °C
- AEC-Q101 qualified, with 100% Rg and UIS testing for automotive reliability
Applications
- Automotive power distribution and load switching
- DC/DC converters and power supplies
- Motor drives, pumps, and fans
- High-efficiency automotive power management systems
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