Vishay SQJ578ER-T1_GE3
Automotive 150 V TrenchFET® Gen V MOSFET with 50 mΩ RDS(on), low gate charge, and +175 °C operation in PowerPAK® SO-10LR
The Vishay SQJ578ER is an automotive-grade 150 V N-channel TrenchFET® Gen V power MOSFET, designed to deliver efficient switching performance in demanding automotive power applications. It combines a maximum RDS(on) of 50 mΩ at 10 V with a low total gate charge of 12 nC max., helping reduce conduction and switching losses.
Housed in the compact PowerPAK® SO-10LR package, the SQJ578ER supports continuous drain current up to 24 A and operation at junction temperatures up to +175 °C. Its low-profile, thermally efficient package makes it well suited for space-constrained, high-power-density designs.
AEC-Q101 qualified, and 100 % Rg and UIS tested, the SQJ578ER provides the robustness and reliability required for automotive designs while combining high-voltage capability with Vishay’s latest-generation TrenchFET technology.
Key features
- 150 V N-channel TrenchFET® Gen V power MOSFET for demanding automotive power designs.
- Low RDS(on) of 50 mΩ max. at VGS = 10 V, helping minimize conduction losses.
- Low total gate charge of 12 nC max. for efficient, fast switching performance.
- Continuous drain current up to 24 A at TC = 25 °C.
Applications
- Automotive battery management and power distribution systems
- Automotive motor drives and actuator controls
- Engine management and electronic control units (ECUs)
- DC/DC converters and automotive power supplies
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