Vishay SIRF5310DP-T1-UE3
30 V TrenchFET® Gen V N-Channel MOSFET delivering industry-leading RDS(on) and low RDS × Qg FOM for reduced conduction losses
The Vishay SiRF5310DP-T1-UE3 is a high-performance 30 V N-channel TrenchFET® Gen V power MOSFET, designed to deliver high efficiency in demanding power-management applications. Its advanced technology provides very low RDS(on), helping to minimize conduction losses and improve overall system efficiency.
With an optimized RDS(on) × Qg figure of merit (FOM), the SiRF5310DP combines low conduction losses with efficient switching performance. This makes it well suited for compact, high-efficiency power designs where thermal performance and power density are key considerations.
The device is housed in Vishay’s compact PowerPAK® SO-8F package, supporting space-efficient PCB layouts while delivering the performance required for modern power conversion and power management designs.
Key features
- 30 V N-channel TrenchFET® Gen V power MOSFET
- Industry-leading low RDS(on) to minimize conduction losses
- Excellent RDS(on) × Qg figure of merit (FOM) for high-efficiency power designs
- Compact PowerPAK® SO-8F package for space-efficient designs
Applications
- Point-of-load (POL) power supplies requiring low conduction losses, high power density, and efficient switching performance
- High-efficiency DC/DC converters for power conversion in computing, industrial, and communication systems
- Synchronous rectification in switch-mode power supplies to reduce conduction losses and improve overall conversion efficiency
- Load and power switching for efficient control of high-current power rails in compact electronic systems
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