Vishay SiR608DP - N-Channel 45 V

The SiR608DP is a high-performance 45 V N-Channel MOSFET built on Vishay Siliconix’s advanced TrenchFET^® Gen IV technology. Designed for high-efficiency power conversion, it combines extremely low on-resistance with optimized gate charge and output charge characteristics to reduce conduction and switching losses.

With a maximum R_DS(on) of 1.2 mΩ at 10 V and continuous drain current capability up to 208 A, the SiR608DP enables compact, high-power-density designs while maintaining excellent thermal performance in the PowerPAK^® SO-8 package.

The device is ideal for synchronous rectification, high-current DC/DC converters, and motor drive applications, where efficiency, reliability, and power density are critical. Its low gate charge, low output charge, and 100% R_g and UIS testing help designers achieve improved system performance and robust operation in demanding power management applications.

Key features

• Ultra-low on-resistance: 1.2 mΩ max at V_GS = 10 V, minimizing conduction losses and improving efficiency.
• Advanced TrenchFET^® Gen IV technology: Optimized for low gate charge (Q_g) and low output charge (Q_oss) to reduce switching losses.
• High current capability: Supports up to 208 A continuous drain current for high-power-density applications.
• Optimized for power conversion: Ideal for synchronous rectification, DC/DC converters, and motor drive control applications.

Applications

• Synchronous rectification – Reduces power losses and improves efficiency in high-current power conversion stages.
• High power density DC/DC converters – Enables compact, efficient power supplies through low RDS(on) and optimized switching performance.
• Motor drive control – Supports efficient motor control circuits requiring high current capability and low losses.
• Industrial and Telecom power systems – Ideal for high-current power management, point-of-load converters, and intermediate bus converters.