Vishay SIJK5716E-T1-GE3
150 V TrenchFET® Gen V N-Channel MOSFET with industry-leading RDS(on) for minimized conduction losses and high-efficiency power
The Vishay SiJK5716E-T1-GE3 is a high-performance 150 V N-channel power MOSFET based on Vishay’s advanced TrenchFET® Gen V technology. Its industry-leading low RDS(on) helps minimize conduction losses, supporting higher efficiency and improved power density in demanding power designs.
Housed in the compact PowerPAK® 10 x 12 (TOLL) package, the SiJK5716E is designed for applications requiring efficient power switching and robust performance. The device is rated for operation up to 175 °C and is 100% Rg and UIS tested, providing added confidence for demanding designs.
With its combination of 150 V capability, low conduction losses, and TrenchFET® Gen V performance, the SiJK5716E provides designers with an effective solution for increasing efficiency while managing thermal and space constraints.
Key features
- 150 V N-channel MOSFET with TrenchFET® Gen V technology
- Industry-leading low RDS(on) for reduced conduction losses
- 175 °C maximum operating temperature for demanding environments
- 100% Rg and UIS tested for robust performance
Applications
- DC/DC converters and power supplies
- Industrial power systems
- Motor drives and control
- High-efficiency power switching applications
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