Vishay SIHF135N65S-GE3
650 V N-channel Power MOSFET with low FOM and reduced switching and conduction losses for high-efficiency power designs
The SiHF135N65S is a 650 V N-channel power MOSFET based on Vishay’s latest-generation SF Series technology. It combines a low RDS(on) × Qg figure of merit with low effective capacitance to help reduce switching and conduction losses in high-efficiency power designs.
With a typical RDS(on) of 0.121 Ω, maximum gate charge of 77 nC, and avalanche-rated ruggedness, the SiHF135N65S provides an efficient and robust solution in a fully isolated TO-220 FULLPAK package.
The device is well suited for server and telecom power supplies, SMPS and PFC stages, solar inverters, motor drives, battery chargers, welding and induction heating, as well as lighting applications.
Key features
- 650 V N-channel Power MOSFET
- Low RDS(on) × Qg figure of merit for high efficiency
- Low effective capacitance for reduced switching losses
- Avalanche energy rated for robust power designs
Applications
- Motor drives, welding & induction heating
- Solar (PV) inverters & battery chargers
- SMPS & power factor correction (PFC)
- Server & telecom power supplies
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