Vishay SI3444DV-T1-GE3
100 V N-Channel TrenchFET® MOSFET optimized for fast switching, delivering efficient power conversion in a compact TSOP-6 package
The Si3444DV-T1-GE3 is a compact 100 V N-channel TrenchFET® power MOSFET designed for fast, efficient switching in space-constrained power applications. Its TSOP-6 package combines a small footprint with strong switching performance, making it well suited for compact power-conversion designs.
With a typical gate charge of 5.4 nC, up to 1.5 A drain current, and maximum RDS(on) of 0.375 Ω at 10 V gate drive, the device supports efficient high-speed switching while helping reduce switching losses. It is also 100% Rg tested for consistent switching characteristics.
The Si3444DV-T1-GE3 is particularly suited as a primary-side switch in low-power DC/DC converters, where compact size, fast switching, and efficient power management are key design requirements.
Key features
- 100 V N-channel TrenchFET® power MOSFET
- Fast switching, PWM optimized for efficient power conversion
- Low gate charge of 5.4 nC typical, helping minimize switching losses
- Compact TSOP-6 package for space-constrained designs
Applications
- Low-power DC/DC converters, especially primary-side switching
- Compact switch-mode power supplies
- Power management circuits
- Space-constrained industrial and consumer power designs
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