STMicroelectronics SGT080R70ILB
Gallium Nitride (GaN) Transistor, 700 V, PowerFLAT™ HV
The SGT080R70ILB is a 700 V, 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Key features
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
- ESD safeguard
Applications
- Adapters for tablets, notebook and AIO
- USB type-C PD adapters and quick chargers
- AC-DC converters
- DC-DC converters
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