Renesas GaN Bidirectional Switch

The TP65B110HRU is a 650V 110mΩ common-drain bidirectional switch (BDS) built on Renesas' SuperGaN^® Gen I bidirectional platform. It conducts current and blocks voltage in both directions with the smallest footprint and a best-in-class switching figure of merit. The device combines a monolithic, bidirectional high-voltage, depletion-mode GaN with normally-off low-voltage silicon MOSFETs to provide superior performance, high threshold for standard gate-drive compatibility, easy integration, and robust reliability for advanced power applications.

Key features

• On-state resistance: R_ss(on) typ = 110mΩ
• Gate threshold voltage: V_{gs, th} = 3V; Maximum gate-source voltage: V_gs, max = ±12V
• d_v/d_t immunity: >100V/ns
• Reverse conduction voltage: V_ss,R = 1.8V
• Transient rating: ±800V
• ESD = 2kV HBM

Applications

• Solar inverters
• AI Infrastructure
• Automotive OBC
• Motor drives
• AC/DC and DC/DC single-stage power conversion architectures