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Nexperia 1200V SiC MOSFET in QDPAK

New QDPAK packaging combines high thermal performance, compact size, and easy assembly for high-power applications

Nexperia 1200V SiC MOSFET in QDPAK product image

Silicon Carbide based 1200 V power MOSFET in a QDPAK plastic package for surface-mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

 

Key features

  • Excellent RDSon temperature stability
  • Very low switching losses
  • Fast reverse recovery
  • Fast switching speed
  • Temperature independent turn-off switching losses
  • Very fast and robust intrinsic body diode
  • Faster commutation and improved switching due to the additional Kelvin source pin

 

Applications

  • E-vehicle charging infrastructure
  • Photovoltaic inverters
  • Switch mode power supply
  • Uninterruptable power supply
  • Motor drives

 

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