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STMicroelectronics LD59100
The LD59100 is a 1 A LDO regulator designed for use in various environments. Its N-MOS topology allows reduction of the Rdson of the pass-element, maintaining a very low-dropout voltage even with very low input power supply voltage. The device feat |
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STMicroelectronics TS883
The open-drain series of nanopower comparator integrates a single version TS880 and a dual version TS883. They feature an ultra low supply current of 250 nA typical per operator with rail-to-rail input capability and open-drain output. The performa |
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STMicroelectronics LED1202
The LED1202 is a 12-channel low quiescent current LED driver; it guarantees 5 V output driving capability and each channel is able to provide up to 20 mA with a headroom voltage of 350 mV (typ.) only. The output current can be adjusted separately for |
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STMicroelectronics VL53L3CX
The VL53L3CX is the latest Time-of-Flight (ToF) product from STMicroelectronics and embeds ST’s third generation FlightSense patented technology. It combines a high performance proximity and ranging sensor, with multi target distance measurements and |
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STMicroelectronics TS3021
The TS3021 single comparator features high-speed response time with rail-to-rail inputs. With a supply voltage specified from 2 to 5 V, this comparator can operate over a wide temperature range: -40 °C to 125 °C. The TS3021 comparator offers microp |
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STMicroelectronics ILPS22QS
The ILPS22QS is an ultra-compact piezoresistive absolute pressure sensor which functions as a digital output barometer, supporting dual full-scale up to user-selectable 4060 hPa. The device delivers ultra-low pressure noise with very low power consum |
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STMicroelectronics IMP23ABSU
The IMP23ABSU is a compact, low-power microphone built with a capacitive sensing element and an IC interface. The sensing element, capable of detecting acoustic waves, is manufactured using a specialized silicon micromachining process to produce audi |
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STMicroelectronics STLQ015
The STLQ015 provides 150 mA of maximum current with an input voltage range from 1.5 V to 5.5 V and a typical dropout voltage of 112 mV. The key feature of this device is its quiescent current, which is just 1.4 µA at maximum output current.The device |
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STMicroelectronics IIS2MDC
The IIS2MDC is a high-accuracy, ultra-low-power 3-axis digital magnetic sensor. The IIS2MDC has a magnetic field dynamic range up to ±50 gauss. The IIS2MDC includes an I2C serial bus interface that supports standard, fast mode, fast mode plus, and hi |
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STMicroelectronics ST730
The ST730 is 300 mA LDO regulator, designed to be used in several medium voltage applications. Ultra-low quiescent current of 5 μA makes it suitable for applications permanently connected to power supply/battery. This feature is also useful when ele |
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STMicroelectronics LDLN025
The LDLN025 is a 250 mA low-dropout voltage regulator, able to work with an input voltage range from 1.5 V to 5.5 V. The typical dropout voltage at 250 mA load is 120 mV. The very low quiescent current, which is just 12 μA at no-load, extends battery |
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STMicroelectronics IIS2ICLX
IIS2ICLXTR is a high-accuracy (ultralow noise, high stability and repeatability) and low-power, 2 axis linear accelerometer with digital output. The IIS2ICLX has a selectable full scale of ±0.5/±1/±2/±3 g and is capable of providing the measured acce |
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STMicroelectronics TSB712
TSB712 6 MHz bandwidth amplifier features rail-to-rail input and output, which is guaranteed to operate from +2.7 V to +36 V single supply as well as from ±1.35 V to ±18 V dual supplies. This amplifier has the advantage of offering a large span of su |
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KIOXIA XG8 series of client SSD
The XG8 series of client SSDs for high-end notebooks, desktops, gaming systems, workstations, as well as data center boot applications. With the XG8 series, KIOXIA bolsters its comprehensive PCIe 4.0 solid-state drive (SSD) portfolio. Designed to b |
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Hailo-8™ M.2 AI module
The M.2 AI accelerator features a full PCIe Gen-3.0 2-lane interface (4-lane in M-key module), delivering unprecedented AI performance for edge devices. The M.2 module can be plugged into an existing edge device with M.2 socket to execute in real-tim |
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STMicroelectronics TSZ121
The TSZ12x series of high precision operational amplifiers offer very low input offset voltages with virtually zero drift. TSZ121 is the single version, TSZ122 the dual version, and TSZ124 the quad version, with pinouts compatible with industry stand |
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STMicroelectronics ISOSD61
The ISOSD61 is a galvanic isolated second order Sigma-Delta modulator based on embedded transformer coupling technology. It converts an analog input signal with maximum range of ±320mV into a high speed, 25 Msps, 1-bit digital data stream. The signal |
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STMicroelectronics TSC888
The TSC888 measures a small differential voltage on a high-side shunt resistor and translates it into a ground-referenced output voltage. The gain is internally fixed. Wide input common-mode voltage range, low quiescent current, and tiny SOT23-5 pack |
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STMicroelectronics TSC1021
The TSC1021 measures a small differential voltage on a high-side shunt resistor and translates it into a ground-referenced output voltage. The TSC1021 has been specifically designed for automotive conditions: load-dump protection up to 60 V, reverse- |
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STMicroelectronics TSV914
The TSV91x and TSV91xA operational amplifiers (op amps) offer low voltage operation and rail-to-rail input and output, as well as an excellent speed/power consumption ratio, providing an 8 MHz gain-bandwidth product while consuming only 1.1 mA maximu |
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STMicroelectronics TSV732
The TSV73x series of single, dual, and quad operational amplifiers offer low-voltage operation, rail-to-rail input and output, and excellent accuracy (Violower than 200 μV at 25 °C). These devices benefit from STMicroelectronics®5 V CMOS technology a |
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Broadcom AR25 series
The AR25 Series is a miniature Absolute Encoder ASIC designed to cater to the growing demand of space-constrained applications. AR25 encoder is a one-chip solution that has the flexibility to cater for variable overall diameters, ranging from 30mm to |
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onsemi N-channel power mosfet 100V
Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Key features Small footprint (5x6mm)Low RDS(on)Low QG and capacitanceRoHS compliant Additional features |
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onsemi EliteSiC module 1200 V
The NXH020P120MNF1 is a EliteSiC MOSFET module containing a 20 mohm 1200V EliteSiC MOSFET half bridge and an NTC thermistor in an F1 module. Key features Recommended gate voltage 18V - 20VLow thermal resistanceOptions for TIM or no TIMImproved R |
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onsemi dual power MOSFETs
Latest 30V technology with lower Figure-of-Merit into lower paraistic inductance, higher power density package. Suitable for compact space required and high switching frequency DC to DC power converter application. Key features Latest 30V techn |
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Toshiba Electronics Europe High Voltage MOSFETs (650V)
Toshiba has added a further four N-channel super junction 650 V power MOSFET devices to extend their DTMOSVI series. The new TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z MOSFETs has reduced the figure of merit “drain-source On-resistance x gate-dr |
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NXP Semiconductors LPC553x/S3x
The LPC553x/S3x MCU family further expands the world’s first general purpose Cortex-M33-based MCU series, offering significant performance enhancement, all on-chip RAM with Parity or ECC, renewed security features and precision analog additions, leve |
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Broadcom AEAT-9933
The Broadcom AEAT-9933 is an angular magnetic rotary sensor that provides accurate angular measurement over a full 360 degrees of rotation. It is a sophisticated system that uses integrated Hall sensor elements with complex analog and digital signal |
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onsemi 5 kVRMS Isolated Gate Driver
The NCP5156DBDWR2G is an isolated dual-channel gate driver with up to 4.5-A/9-A source and sink peak current. It is designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches, offering short and matched propagation delays. Inte |
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onsemi N-Channel MOSFET 100V
This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg a |