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Get access to the most innovative products and technologies from EBV's leading suppliers and easily search and filter the list below to find what you need using our New Product Introduction pages. 

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ams OSRAM FIREFLY™ E1608
Introducing the FIREFLY E1608 CN DELSS1.27 & CN DELSS2.27 with new IR:6 chip technology resulting in market leading efficiency in the well-known 1608 package. Available in wavelength options 850 nm for higher sensitivity & 940 nm for reduced red glow
ams OSRAM OSLON™ Compact PL KW CELNM4.TK
Latest ams OSRAM chip technology surrounded by our worldwide established and very robust OSLON Compact PL package, providing top notch LED performance for the automotive headlamp market.   Highest available brightness in the marketBest combination o
Vishay VODA1275 - High Output Voltage Photovoltaic Mosfet Driver
The VODA1275 photovoltaic MOSFET driver uses an internal infrared LED optically coupled to a photovoltaic diode array. When the LED is energized, the diode array generates a DC voltage capable of driving the gate of an external MOSFET. This allows t
Vishay MXP120A045SE - MaxSiC® 1200 V N-Channel SiC MOSFET
Engineered for next-generation efficiency, this device combines ultra-low RDS(on) with lightning-fast switching to minimize losses and maximize performance in high-voltage applications. Its robust silicon carbide technology ensures superior thermal s
Infineon CoolGaN™ Bidirectional Switch 650 V G5
The CoolGaN™ bidirectional switch (BDS) 650 V G5 is a monolithic device that actively blocks voltage and current in both directions. It represents a remarkable innovation in power electronics, particularly for enabling single-stage power conversion.
Nexperia USB Type-C and Power Delivery Controller
Nexperia offers a series of Universal Serial Bus (USB) Type-C and Power Delivery (PD) controllers that deliver robust USB PD charging solutions for fast-charge power adapters, car chargers, power banks, and dongles. Designed to work with various AC/D
Nexperia Single Channel Load Switch with Soft Start
NPS3005 is a single channel load switch with an adjustable soft start. It contains a 6 A continuous current rated N-channel MOSFET that can operate over an input voltage range of 0.5 V to 5.5 V. NPS3005 is controlled by an EN pin which supports down
Nexperia Multi-Mode Digital LLC Controller
NEX82016 is a highly integrated and high-performance digital-analog hybrid LLC controller. It operates in multi-mode conditions, and works together with the dual channel SR controller NEX81915/6 to achieve an efficient and reliable power supply. This
STMicroelectronics STM32WL33xC
The STM32WL33xx is a high performance ultra-low power wireless application processor, intended for RF wireless applications in the sub-1 GHz band. It is designed to operate in both the license-free ISM and SRD frequency bands such as 433, 868, and 91
STMicroelectronics STM32WL33xB
The STM32WL33xx is a high performance ultra-low power wireless application processor, intended for RF wireless applications in the sub-1 GHz band. It is designed to operate in both the license-free ISM and SRD frequency bands such as 433, 868, and 91
STMicroelectronics STM32WL33x8
The STM32WL33xx is a high performance ultra-low power wireless application processor, intended for RF wireless applications in the sub-1 GHz band. It is designed to operate in both the license-free ISM and SRD frequency bands such as 433, 868, and 91
STMicroelectronics STM32WL31xx
The STM32WL31xx is a high performance ultra-low power wireless application processor, intended for RF wireless applications in the sub-1 GHz band. It is designed to operate in both the license-free ISM and SRD frequency bands such as 433, 868, and 91
STMicroelectronics STM32WL30xx
The STM32WL30xx is a high performance ultra-low power wireless application processor, intended for RF wireless applications in the sub-1 GHz band. It is designed to operate in both the license-free ISM and SRD frequency bands such as 433, 868, and 91
Nexperia Power MOSFET with Enhanced Dynamic Current Sharing in LFPAK88
Introducing the latest additions to its ever-expanding portfolio of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ
Infineon CoolSiC™ MOSFET G2 1400 V in TO-247PLUS-4 Reflow Package
The CoolSiC™ MOSFET G2 1400 V in a TO-247PLUS-4 Reflow package is  ideal for high-output power applications such as EV charging, ESS, CAV and other applications.  The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improve
Nexperia I²C Switches and Multiplexers
Our I²C switches and multiplexers portfolio enables seamless communication between a single I²C controller and multiple target devices, even with shared addresses, by selectively routing signals. These devices simplify complex system architecture, re
Nexperia Low-Voltage Translating 16-bit I²C-bus/SMBus I/O Expander
The NCA6416-Q100 is a versatile 16-bit general-purpose I‌‌/‌‌O expander designed for microcontrollers that need additional I/O pins. It communicates via an I²C-bus interface, making it ideal for applications with minimal space and wiring, such as bat
Renesas RZ/G3E
The RZ/G3E is a versatile MPU designed for mid-range Human-Machine Interface (HMI) applications, offering robust edge computing capabilities and high-speed 5G connectivity. It features a quad-core Arm® Cortex®-A55 processor at 1.8 GHz, a dedicated Co
Renesas RAA489300
The RAA489300 is a high-efficiency DC/DC controller built for 3-level buck topology, offering reduced inductance and minimized power loss for compact, high-performance designs. Featuring Renesas R3™ technology, it ensures fast transient response and
Renesas RA4C1
The RA4C1 MCU, the latest addition to the RA4 series, delivers a low‑power solution with advanced security features, making it ideal for applications such as metering or IoT devices. Operating down to 1.6 V and achieving single‑digit µA standby curre
onsemi NSBAMXW - Digital Transistors (BRTs)
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resi
onsemi AR0544 - 5MP Image Sensors
AR0544, belongs to onsemi's Hyperlux LP product family, is a 1/4.2inch Back-Side Illuminated (BSI) Stacked CMOS digital image sensor with a 2592 x 1944 activepixel array. This advanced sensor captures images in either Linear or enhanced Dynamic Range
Infineon First LITIX™ Interior TLD4020-3ET
The TLD4020-3ET is an automotive LED driver with integrated and protected output stages. It is designed to control RGB LEDs with a current up to 51.5 mA as linear current sink (LCS). It comes with an integrated 32-Bit Arm® Cortex®-M23 MCU for optimal
Nisshinbo Micro Devices NR1644
The NR1644 is a 2 A output voltage regulator with a minimum output voltage as low as 0.4 V. It incorporates advanced features such as a high ripple rejection ratio of 110 dB at 1 kHz and ultra-low output noise voltage of just 5µVrms. It makes it an i
Nisshinbo Micro Devices NB7200
The NB7200 Series is a two-cell Li-ion/Li-polymer battery protection IC designed to safeguard packs in space-constrained consumer and portable industrial designs. It integrates overcharge and overdischarge voltage detection, and charge/discharge over
STMicroelectronics STL145N4LF8AG
The STL145N4LF8AG is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing inter
STMicroelectronics STK615N4F8AG→STK615N4F8AG
The STK615N4F8AG is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing inter
STMicroelectronics SCT014HU65G3AG→SCT014HU65G3AG
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high
STMicroelectronics STPSC20G065→STPSC20G065WL
The SiC diode STPSC20G065, moulded in DO-247 LL with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode struc
STMicroelectronics STPSC30G065→STPSC30G065WL
The SiC diode STPSC30G065, available in DO-247 LL with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode str
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