onsemi NTH4L013N120M3S
NTH4L013N120M3S - Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mOhm, 1200 V, M3S, TO-247-4L
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Key features
- TO-247-4L Package with Kelvin source configuration
- Excellent FOM [ = Rdson * Eoss ]
- Ultra Low Gate Charge (QG(tot) = 254 nC)
- High Speed Switching with Low Capacitance (Coss = 262 pF)
- 15V to 18V Gate Drive
- New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses
- 100% Avalanche Tested
- Halide Free and RoHS Compliant
Applications
- UPS / ESS
- Solar
- EV Charger
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