Teledyne TDRM24C512C-L

Teledyne e2v have announced the availability of the 512Kb CBRAM (TDRM24C512C-L), an ultra-low power, non-volatile memory (NVM) based on resistive RAM technology that can be used in aerospace and defense applications.   

The TDRM24C512C-L uses Adesto Technologies’ proprietary CBRAM (Conductive Bridging RAM) technology and provides system designers a faster and lower power alternative to legacy serial EEPROMs. The TDRM24C512C-L was designed on a process that has shown to be radiation tolerant, making it a good choice for satellites and other high-altitude applications.

Teledyne e2v’s Hi-Rel resistive memory offers a 100K write cycle endurance and data retention of greater than 40 years at 125°C. The memory is available now and is packaged in a 10-lead ceramic gullwing flat package (10L-FPGW).

Block diagram