Data centres are one of many GaN technology uses casesIn power electronics, gallium nitride (GaN) is emerging as a significant player alongside the established silicon-based technologies. With manufacturers increasingly incorporating GaN — not only in consumer products like smartphone chargers, but also in industrial applications where power density and reliability are critical — it's clear this material is making substantial inroads due to its compelling advantages.
In fact, GaN is increasingly becoming the preferred material over silicon for a range of power applications, as well as in RF and optoelectronics. But what are the reasons behind this shift?
The primary advantage of GaN in power electronics is its superior efficiency. This is attributed to several factors: GaN devices can switch at much higher frequencies than their silicon counterparts, and they exhibit no reverse recovery losses. Additionally, the lower drain to source on-state resistance (RDS(on)) of GaN reduces conduction losses, contributing to overall energy savings.
GaN's high electron mobility, surpassing that of both silicon and silicon carbide (SiC), allows for devices with higher electric field strength and, consequently, GaN components can be more compact than equivalent silicon devices, facilitating greater power density in a smaller footprint.
It is important to acknowledge that GaN's traditional domain has been in low to medium voltage applications, typically up to around 650 V. However, the development of higher voltage GaN devices is progressively extending their applicability. For applications necessitating voltages beyond this range, silicon or SiC currently remain the materials of choice.
Within the power sector, the lateral high electron mobility transistor (HEMT) is the most prevalent GaN device. This article will examine the various applications of GaN HEMTs and field-effect transistors (FETs), examining the reasons behind GaN's growing preference in the industry.
Automotive applications
The market for power GaN devices is expected to grow from US$260 million in 2023 to US$2.5 billion by 2029. The automotive industry is set to drive a significant portion of this growth, with GaN solutions in automotive and mobility projected to hit US$750 million, according to insights from Yole Group1.
Traditionally, the high voltage and power demands of automotive electronics have favoured silicon and SiC materials. However, the landscape is changing and higher voltage GaN devices are emerging, opening up new possibilities. While silicon or SiC has been the staple for critical components like the car’s traction inverter, GaN is starting to make inroads here as well.
In electric vehicles (EVs), GaN is already commonly used in onboard chargers (OBCs) that convert AC power from the grid to DC, enhancing the efficiency of fast charging systems compatible with high-voltage DC chargers found at public charging stations. Additionally, GaN’s inherent bidirectional capabilities can facilitate OBCs equipped with vehicle-to-grid (V2G) capabilities, allowing energy to be returned to the grid and supporting energy demand management.
In the automotive arena, GaN is valued for its exceptional efficiency and compact power density. It also meets the high-reliability expectations and strict quality standards essential in vehicle manufacturing.
Consumer uses
In consumer applications, GaN is seeing significant usage, particularly in high-power chargers for smartphones, tablets, and laptops. These chargers, including devices supporting USB Power Delivery (USB-PD), benefit from GaN's efficiency, enabling them to be compact and lightweight while offering rapid charging capabilities and meeting the needs of the consumer head-on.
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With the ongoing shift to renewable energy and the electrification of transport and industry, the demand for higher power and greater energy efficiency in electronics is increasing. Wide bandgap technologies including SiC and GaN bring many advantages.
WBG OVERVIEWBeyond wired charging, GaN is also seeing deployment in some wireless power systems, allowing for faster and cooler charging. In the audio industry, high-fidelity amplifiers are beginning to use GaN for its superior efficiency and audio performance. Even in gaming, where power demands are high, GaN may see use in future console power supplies to manage heat and improve energy efficiency.
GaN’s use is also expanding to other consumer applications, including overvoltage protection in smartphones and home appliances.2 As GaN technology continues to evolve, its adoption across various consumer electronics is expected to grow, driven by the demand for more efficient and compact power solutions.
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GaN in renewables and green energy
In solar photovoltaic (PV) systems, inverters play a crucial role in converting the variable DC output of solar panels into a grid-compatible AC voltage. Efficiency is paramount in this process, and GaN FET devices are an effective solution for rooftop solar installations. While SiC devices, with their ability to handle higher voltages, are often used in large-scale solar farms, GaN's high switching frequencies — ranging from 100 kHz to 300 kHz — offer improved efficiency and reduced size for the power conversion components.
In many renewables applications, the high voltage capabilities of SiC mean it’s the preferred alternative to silicon, but GaN is increasingly becoming a viable choice. For instance, in heat pump systems, GaN-based inverters are emerging as an ideal choice for energy conversion, offering both higher efficiency and better power density compared to traditional silicon solutions.
Data centres, telecoms, and industrial
In telecoms infrastructure, GaN’s excellent efficiency and high power density have meant it has been used for base stations over the past few years, including both 4G and 5G systems. As the demands on base station power continue to increase, for example to supply the multiple antenna arrays used for 5G, the benefits of GaN will continue to make it the preferred semiconductor material.
While silicon and SiC are more common choices than GaN in industrial applications, due to their lower costs and higher voltage capabilities, GaN is finding a niche where efficiency and high power density are critical. This includes portable robotics, where GaN's lightweight and efficient power conversion is essential for mobility and operation.
With the ever-growing power demands of AI, the excellent efficiency of GaN is also making it increasingly attractive in power supplies for data centres and servers, as well as backup power systems. A transition from silicon to GaN in data centres is estimated to have the potential to cut energy losses by 30% to 40%.3 Additionally, the shift towards 48 V power architectures in data centres is aligning well with GaN's capabilities, and can further enhance its appeal for these critical power applications.
Design considerations
Designing with GaN HEMTs requires gate drivers that can provide the appropriate lower voltage levels compared to those needed for traditional silicon-based devices, while also managing the high switching frequencies characteristic of GaN. Engineers must also address potential noise and electromagnetic interference (EMI) through careful PCB layout and by minimising parasitic inductances.
Another area that must be considered carefully is thermal management, with GaN HEMTs’ high power density meaning that heat dissipation can be more difficult, and appropriate measures must be taken to ensure device longevity.
Choosing your GaN solution
The selection of the most suitable semiconductor material for your power application hinges on a variety of factors, including efficiency, power density, cost, and reliability. GaN is the correct choice for certain designs where its specific advantages meet the application’s technical demands.
However, for many high-voltage applications silicon or SiC may be the more appropriate materials. To assist, the team at Avnet Silica, including our Field Application Engineers (FAEs) and power engineers, are on hand to help you make an informed decision, enabling you to choose the right components that will lead to a reliable and efficient power system design.
Reference
[1] https://www.yolegroup.com/strategy-insights/from-power-to-rf-gans-journey-to-a-us4-35b-market-by-2029/
[2] https://www.yolegroup.com/strategy-insights/from-power-to-rf-gans-journey-to-a-us4-35b-market-by-2029/
[3] https://resources.pcb.cadence.com/blog/2023-gallium-nitride-semiconductors-summary
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