IGBT Technologies

The enduring importance of the IGBT in power electronics

Introduced in the 1980s, the IGBT was a major milestone in power electronics. Combining the advantages of the Bipolar Junction Transistor (BJT) and the Metal Oxide Field-Effect Transistor (MOSFET), the IGBT is found in a wide and growing spectrum of high-voltage, high-current applications.

Operating at withstand voltages up to 6.5 kV and switching frequencies between 2 kHz and 50 kHz, the IGBT is one of the most widely used power electronics devices. The IGBT’s efficient power management capabilities explain its popularity across multiple sectors, including renewable energy, electric vehicles, and industrial automation.

The IGBT advantage

IGBTs offer several important advantages over other types of power transistors.

  • High voltage capabilities

  • Low on-state power dissipation
  • Fast switching speeds
  • Low resistance
  • Ease of driving
  • Reduced size and cost
  • Low losses

IGBTs are commonly used in applications including inverters, switching power supplies, traction motor control, electronic switching devices, frequency converters — even our induction cooktops!

Selecting the right IGBT

Targeting everything from speed-controlled, low-power compressor drives in refrigerators to traction drives in railways, the IGBT variants on the market are, unsurprisingly, numerous. Discrete devices are available from 300V upwards, while power modules operate up to 6500V. Current-carrying capabilities range from a few amps to several kilo-amps and package options including the classic TO series, with SMD configurations also available. Where do you begin?

When you partner with Avnet Silica, we'll work with you to understand your full product requirements and take the time to discover the best approach for you. Rather than simply pushing the benefits of any single technology (or any one supplier), we take a more considered approach, based on the full context of your product, your market, and your business.

We’ll build the right team of experts to match your needs, drawing from our own team of power engineers and FAEs, market specialists and regional experts. As well as your own, in-house resources. You’ll also have access to the expertise of our supplier network and third-party services like EMC, magnetics, testing, measurement, and more. We take a full-system approach to support you through the entire product lifecycle. So, wherever you are, we can help you get where you need to be.

Leverage our broad range of supplier partners and in-house expertise

Our broad portfolio is founded upon our extensive range of supplier partners offering innovative power products. When you work with us, you immediately leverage these solid relationships. You’ll have direct access to proprietary information from these suppliers about their upcoming product roadmaps, product lifecycles, and which companies will be offering which packages, making sure you have a second and third source for your chosen technology.

We’ll help you decide on the best supplier, based on your application, designs, location, size, and your specific support needs. Working together, we’ll help you innovate — and get to market faster.

LOOKING FOR SUPPORT? CONTACT OUR POWER EXPERTS

The IGBT vs SiC argument

IGBTs vs Silicon Carbide (SiC)

Thomas Hauer, Power FAE at Avnet Silica, joins Electropages Robin Mitchell to compare Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) devices for power electronics applications. IGBTs, a mature technology, are known for their high current handling capabilities but suffer from limitations like knee voltage and slower switching speeds. SiC devices, on the other hand, offer advantages such as faster switching speeds, higher efficiency, and better thermal performance. The discussion highlights the increasing popularity of SiC devices, especially in applications like electric vehicles, where their ability to handle high power densities and operate at higher frequencies is crucial.

IGBT vs SiC: Thomas Hauer's interview with electropages

However, challenges associated with SiC devices, such as gate drive complexity and potential for increased electromagnetic interference (EMI), need to be carefully considered. The video concludes by emphasising the importance of selecting the right technology based on specific application requirements and trade-offs between performance, cost, and reliability.

Silicon carbide macro

Five Ways SiC MOSFET Technology Differs from IGBTs

IGBTs have evolved over time and are still viable and preferred in many applications. In fact, the market for IGBTs is still expanding, with a CAGR of around 10%. So, what are the differences that make one or the other technology suitable for a particular design? The Avnet Silica Power Specialists consider five aspects and how they affect your choice. 

Read Article

Power Discretes - See Wide Bandgap, MOSFET and IGBT Products

Head over to our full-service portal to see a range of power discrete products including wide bandgap, MOSFET and IGBT solutions from suppliers such as onsemi, NXP, Qorvo, STMicroelectronics, MPS, Microchip and Renesas. 

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Webinar: Unlocking Power Efficiency with onsemi

This webinar series is designed to bring together industry experts and engineers to explore the latest advancements in power electronics. Throughout the day, we will delve into cutting-edge technologies, innovative solutions, and practical applications that are shaping the future of electronics. Join us for a series of insightful sessions, live Q&As, and interactive discussions that will equip you with the knowledge and tools to stay ahead in the rapidly evolving world of power electronics.

Agenda:

  • Avnet Silica Intro
  • Minimise Power losses with onsemi PowerTrench® T10 Generation of Low and Middle-Voltage MOSFETs
  • Next-Gen Motor Drives: Exploring FS7 IGBT and SiC Innovations
  • Accelerate your Energy storage system’s design with onsemi’s Discrete and module solutions
  • Why Selecting the Right Gate Driver Makes All the Difference for Your Power Application
WATCH ON-DEMAND

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