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A necessary companion for discrete power MOSFETs and IGBTs as well as digital – microcontrollers, DSPs and FPGs – or analog controllers in any switched-mode power converter, STDRIVE gate drivers generate the necessary voltage and current level required to accurately and efficiently activate the power stage in industrial, consumer, computer and automotive applications.

STDRIVE comes with extensive evaluation hardware and software as well as a technical documentation toolbox to help minimize time-to-market.

The STGAP product family: The STGAP series offers isolated gate drivers with reinforced galvanic isolation and protections, ideal for driving MOSFETs, IGBTs, and SiC transistors in applications like motor control, power supplies, and EV chargers. These drivers offer superior isolation, flexible parameters, and robust diagnostics to enhance system reliability and performance. Evaluation tools and documentation are available to accelerate your time to market.
 

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ST’s high-voltage drivers are designed to optimize vector motor drive systems and feature excellent performance at high switching frequency and smart shutdown to protect the final application.

STDRIVE MOSFET and IGBT gate drivers can integrate a comparator for protection, an operational amplifier for current sensing and an integrated bootstrap diode, thus reducing the number of external components required at system level.

 

Part Number Associated Power transistor General Description Channel number Package Isource / Sink (Atyp) Features / protections
L6388E MOSFETs, IGBTs 600V Half Bridge Driver with embedded bootstrap diode 2 SO8 0.65/0.4 Undervoltage lockout, Interlocking function
L6491 MOSFETs, IGBTs 600V Half Bridge Driver with embedded bootstrap diode 2 SO-14 4 Interlocking function, programmable Dead time, Comparator & Overcurrent protection, Shut down, Undervoltage lockout
L6494 MOSFETs, IGBTs 600V Half Bridge Driver with embedded bootstrap diode 2 SO-14 2 Programmable Dead time, shut down, interlocking function, undervoltage lockout
L6498 MOSFETs, IGBTs 600V Half Bridge Driver with embedded bootstrap diode 2 SO-14, SO-8 2 Undervoltage lockout, Interlocking function
STDRIVE601 MOSFETs, IGBTs 600V triple Half Bridge driver with bootstrap diode 3 SO28 0.2 / 0.35 Comparator, Overcurrent protection, Undervoltage lockout, Interlocking function

The STDRIVE® GaN gate drivers  devices are half-bridge gate drivers for Enhancement mode GaN FETs or N-channel power MOSFET.

The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.

They feature UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP.

 

Part Number Associated Power transistor General Description Channel number Package Isource / Sink (Atyp) Features / protections
STDRIVEG610 GaN 600V Half Bridge driver for GaN (Power Supply Applications) 2 QFN 4x5 1 /2.4 Integrated LDOs, ultra fast start up time, up to 1 MHz Fsw
STDRIVEG611 GaN 600V Half Bridge driver for GaN (Motor Control Applications) 2 QFN 4x5 1 /2.4 Integrated LDOs, Comparator for overcurrent detection with Smart Shutdown

ST offers the STGAP series of isolated gate drivers for MOSFETs and IGBTs that provide galvanic isolation between the input section, which connects to the control part of the system, and the MOSFET or IGBT being driven.

Galvanic isolation is attained using a high-voltage, on-chip, micro transformer that ensures commands and diagnostic information are reliably transferred to and from the floating – with respect to ground – section of the circuit.

STGAP isolated gate drivers are extremely flexible as they provide a large number of parameters that can be adjusted to best match the selected MOSFET or IGBT and system requirements. They also provide extensive diagnostic features to help enhance system robustness and reliability. Evaluation hardware, software and technical documentation are available to help minimize time to market.

 

Part Number Associated Power transistor General Description Channel number Package Isource / Sink (Atyp) Features / protections
STGAP2G (S, SN) GaN Isolated and non isolated GaN driver 1 SO8N, SO8W 2/3 5V UVLO, separated GON and GOFF, 1700V /1200V HV BUS
STGAP2 (S, HS,SICS,SICSN) SiC, IGBTs Isolated and not isolated driver 1 SO8N, SO8W 4 UVLO, Miller Clamp or separated GON and GOFF, 1700V /1200V HV BUS , UL1577 certified
STGAP3S6S / STGAP3S6I SiC, IGBTs Reinforced isolated Gate Driver 1 SO16W 6 Miller Clamp driver, desaturation protection and adjustable SOFTOFF, VDD and VH UVLOs, UL1577 certified
STGAP3SXISTGAP3SXS SiC, IGBTs Reinforced isolated Gate Driver 1 SO16W 10 Miller Clamp driver, desaturation protection and adjustable SOFTOFF, VDD and VH UVLOs, Ul1577 certified
STGAP4S SiC, IGBTs Automotive advanced isolated gate driver 1 SO36W 0.6/205 Active Miller clamp, Desaturation detection, Overcurrent detection, VCE Clamp protection, Temperature waning, shutdown protection, Undervoltage lockout, Overvoltage lockout

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