STMicroelectronics has been a major player in power electronics for over 30 years, starting with early silicon-based power devices such as MOSFETs, IGBTs and power management ICs before introducing SiC-based technologies and, more recently, GaN technology. STMicroelectronics is often pushing the boundaries of semiconductor technology. SiC Gen3 MOSFET technology is offered in a large variety of Industry standard, multi source, discrete packages from 650V to 1700V. With a comprehensive product portfolio, a focus on key application areas and a robust ecosystem with excellent support, STMicroelectronics is often a top choice for engineers working on their next power project.
Unlock thermal performance for SiC switches — get your exclusive technical comparison
Ready to go deeper into top-side cooling techniques? In this exclusive STMicroelectronics presentation, you’ll discover:
- Thermal and electrical benchmarking of HU3PAK vs QDPAK
- Top-side cooling architectures and design guidelines
- Trade-offs in mechanical stress, manufacturability, reliability
- Practical recommendations for high-power applications
STPOWER SiC MOSFETs and Diodes are based on innovative wide bandgap materials (WBG), that offer higher power density for automotive and industrial applications, enabling smaller and lighter power designs featuring higher power density.
With an extended range of voltage, rating from 650 to 2200 V, ST’s silicon carbide MOSFETS feature excellent switching performance combined with very low on-state resistance RDS(on) per area.
ST SiC Diodes are available from 600 to 1200 V with single and dual diodes encapsulated in package sizes from DPAK to TO-247, including the ceramic insulated TO-220AB/AC offering great flexibility to designers looking for efficiency, robustness and fast time-to-market. This family of devices offers a significant power-loss reduction, commonly used in motor drives and uninterruptible power supplies (UPS). ST’s automotive-grade 650 and 1200 V SiC diodes – AEC-Q101-qualified and PPAP capable – feature the lowest forward voltage drop (VF) on the market, for optimal efficiency in electric vehicle (EV) applications.
Thomas Hauer demonstrates the ST 11kW Bidirectional Battery Charger at PCIM25
- Webinars
- Articles
- Videos
Webinars on-demand
USB-C: The Smarter Power Solution
USB Type-C Power Delivery (USB-C PD) is transforming the way devices are powered, establishing itself as the global standard for efficient energy transfer. No longer confined to conventional electronics, USB-C PD now extends to high-performance computing, e-mobility, and industrial automation, enabling universal and intelligent power management.
The Rise of Intelligent Robotics
Robotics is transforming the way we live and work. In today’s fast-paced industrial landscape, robots are not only enhancing productivity — they’re also reshaping how tasks are performed across factories, warehouses, and logistics hubs.
Intelligent Energy Management and Storage Solutions
As the global energy landscape shifts toward decentralization, electrification, and real-time optimization, the demand for secure, scalable, and intelligent energy systems is greater than ever.
Advanced Automotive Power Solutions
Join Avnet Silica and our key technology partners for a digital experience dedicated to the future of electrified mobility. As the automotive industry accelerates toward smarter, safer, and more sustainable electric vehicles, the demands on power electronics, system efficiency, and design innovation have never been higher.
Articles that mention STMicroelectronics
Efficiency Gains of SiC Modules
Silicon carbide’s advantages over IGBTs including lower conduction losses. The linear characteristics of SiC and switching frequency are key to its value. We look at these figures of merit as they apply to SiC modules available now.
Accurate Loss Calculation for SiC Devices
Loss calculations are a critical part of power design. These include conduction and switching losses, and the impact of thermal losses. We look at the tools and methodologies available to help engineers find the right design selection.
Five Things to Consider Before Switching to SiC in Power Conversion
SiC MOSFETs are often presented as an attractive upgrade to older technologies such as IGBTs and Silicon MOSFETs. Although in some limited cases, SiC can be a drop-in replacement, to get maximum benefit, the system should be considered as a whole. To explain more, the Avnet Silica Power Specialists discuss five example areas which affect your design approach.
Choosing Power Components for Maximum Lifetime Value
This article explores the essential factors in selecting power components that maximise lifetime value. From material innovations like wide bandgap (WBG) semiconductors to robust design and environmental resilience, these considerations are essential for reducing field failures and ensuring sustained performance in demanding environments.
Automotive Applications of GaN Power Semiconductors
Silicon is the incumbent semiconductor material for power applications, but in our cars, it’s being replaced by wide bandgap (WBG) materials that offer improved efficiency and greater power density.
The two most commonly used WBG materials are gallium nitride (GaN) and silicon carbide (SiC). Although it offers excellent performance, GaN is typically only suited for applications up to around 650 V.
Silicon Carbide Power Semiconductors: An Overview
The practical result of having a wider bandgap is properties that become extremely useful for power electronics, including reduced conduction and switching losses, allowing for faster switching and better efficiency. Due to its wide bandgap, SiC can also operate at temperatures and voltages higher than silicon. Correspondingly, a SiC power IC delivers the same performance as a silicon power IC in a smaller and lighter package.
In this article, we provide an overview of SiC and its advantages for power electronics applications.
WBG Power Semiconductors: An Overview
Wide bandgap (WBG) semiconductors are steadily becoming more common in power electronics applications, replacing existing silicon alternatives. They have several key advantages over silicon — notably, their ability to handle greater switching frequencies, which can improve conversion efficiency, and to operate at higher temperatures and higher voltages.
That’s the elevator pitch, but what actually is a wide bandgap?
Advancements in Power Packaging Technologies for SiC Semiconductor Cooling
Packaging is playing an increasingly important role in power semiconductor performance, particularly when looking at wide-bandgap materials that deliver higher power in a smaller footprint. Discover the latest advancements in packaging technologies for silicon carbide (SiC) power semiconductors, addressing thermal management and enhancing performance and reliability in electric vehicles (EVs).
Like what you see?
Follow us on LinkedIn
Follow our dedicated power page on LinkedIn for the latest power updates and news from our team of power experts.
STMicroelectronics Analog Solutions
See the full portfolio of analog solutions from STMicroelectronics
Charging
11kW Bidirectional Battery Charger
Discover the ST 11kW bidirectional battery charger, an all-in-one solution for high-voltage charging in both industrial and automotive applications.
Have a question?Get in touch: |