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SiC MOSFETs

Intro SiC MOSFTETs (MM)

SiC MOSFETs raise the bar for safe, robust and reliable power switching. Excellent RDS(on) temperature stability, fast switching speed, and high short-circuit durability, making them ideal for high-power and high-voltage industrial applications. The devices offers superior gate charge characteristics and an optimized gate charge ratio, enabling low power consumption in gate drivers and high immunity to parasitic turn-on effects. With ultra-small threshold voltage tolerance, a robust body diode featuring very low forward voltage, and minimal leakage current up to 1200 V, it ensures reliable and efficient performance across demanding applications.

Front and back side of Nexperia IGBT 650 V

SiC MOSFETs table (LC)

SiC Mosfets

VDS​ (V) RDSon​​ (mΩ)
@18V VGS
RDSon​​ (mΩ)
@15V VGS
TO-247-3 TO-247-4 TO-263-7​ X.PAK​
1200 17        
30 40
40    
60 80

 

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SiC MOSFET application case (LC)

Application case

SiC MOSFET X.PAK mixed media (MM)

X.PAK - Performance and ease-of-use for PV Inverter Rectification

1200 V SiC MOSFETs in X.PAK package deliver advanced thermal management and power density for high-power applications. The innovative surface-mount (SMD) top-side cooled package X.PAK combines the assembly simplicity of SMD with the cooling efficiency of through-hole technology. 

  • High Voltage Capability (1200 V) ideal for DC bus voltages in both residential and industrial PV systems
  • Low RDS(on) minimizes conduction losses, improving overall system efficiency
  • Industry-Leading Temperature Stability
    RDS(on) increases by only 38% over a wide operating range from 25 °C to 175 °C, ensuring consistent performance under thermal stress
  • Top-Side Cooling (X.PAK Package) enables efficient heat dissipation in compact inverter designs, enabling higher power density and simplified heatsink integration
  • Kelvin Source Pin enhances gate drive control and reduces switching noise - critical for high-frequency inverter operation
  • Robust Body Diode supports fast reverse recovery and ruggedness, ideal for hard-switching environments in full-bridge inverter topologies.
See SiC Diodes

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Prod Nexperia SiC MOSFETs & Diodes (RM)

Nexperia

SiC MOSFETs & Diodes

Nexperia’s Silicon Carbide MOSFETs are the products of choice for E-vehicle charging infrastructure, photovoltaic inverters, and motor drives.

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