Nexperia’s power diodes, including Silicon Carbide (SiC) diodes and fast recovery rectifiers, deliver high-efficiency, rugged performance for demanding industrial and automotive environments. With AEC-Q101 qualified options and advanced packaging, these diodes enable compact, thermally robust designs for power conversion, battery charging, onboard vehicle systems and many others.
- SiC diodes
- Recovery rectifiers
SiC Diodes
Silicon Carbide (SiC) diodes deliver high-efficiency, reliable power conversion in demanding industrial environments, where thermal stress and voltage transients are common. Their temperature-independent switching and zero reverse recovery behavior ensure consistent performance across a wide operating range. Featuring an outstanding figure-of-merit (Qc × VF), these diodes maximize system-level efficiency, making them ideal for motor drives, power supplies, and energy infrastructure.
For enhanced ruggedness and thermal reliability, Nexperia’s SiC diodes employ Merged PiN Schottky (MPS) technology. This hybrid structure combines the fast-switching, low-loss characteristics of a Schottky diode with the high surge capability of a PiN region. It also reduces leakage current and improves reverse blocking performance, contributing to longer system lifetimes and greater design flexibility.
Portfolio overview
| VRRM (V) | IF (A) | DPAK R2P | D2PAK R2P | TO-220-2 | TO-247-2 | Bare die |
|---|---|---|---|---|---|---|
| 650 | 6 | ✔ | ✔ | ✔ | ||
| 10 | ✔ | ✔ | ✔ | ✔ | ||
| 16 | ✔ | ✔ | ✔ | |||
| 20 | ✔ | ✔ | ✔ | |||
| 1200 | 20 | ✔ | ✔ |
Nexperia's SiC diodes feature Merged-PiN-Schottky (MPS) structure, overcoming the limitations of pure Schottky diodes.
Merged-PiN-Schottky (MPS) combines a Schottky diode and a high-voltage PN junction in parallel. This hybrid structure enables low forward voltage drop - typically 1.35 V at 8 A, 25°C for 650 V devices — minimizing conduction losses during steady-state operation. Under transient or fault conditions, the PN region activates, allowing the device to sustain surge currents exceeding 900 A for 10 µs pulses (with Cu pad metallization).
Additionally, MPS diodes exhibit reduced reverse leakage current and enhanced avalanche ruggedness, making them suitable for high-reliability power conversion environments.
Application case
Selecting SiC Diodes for Battery Energy Storage Systems (BESS)
650 V SiC Diodes are ideal for systems with DC bus voltages up to ~400–500 V (residential or commercial BESS) and prioritize space/cost considerations.
- Low Forward Voltage Drop (VF ~1.3–1.5 V) for better efficiency at lower voltages
- Small packages (TO-220, D²PAK, DFN) for integration in compact designs
- Low Reverse Recovery Charge (Qrr) and short trr (<30 ns) enable high-frequency operation in boost and bidirectional converters
1200 V SiC Diodes are well-suited High-voltage industrial BESS (≥800 V)
- Higher voltage margin in a single device improves safety and reliability by reducing the need for series-connected diodes
- High surge current capability (IFSM ~100–200A) and excellent dv/dt immunity (>50 V/ns) ensure robust performance under switching transients and grid disturbances
- Low leakage current and robust packaging → ideal for industrial and utility-scale environments
Both voltage classes feature MPS technology, enabling high surge current capability and stable operation under transients.
More products
Recovery rectifiers
Recovery rectifiers with voltage ratings from 200V to 650V in hyperfast (trr < 30 ns) and ultrafast (trr < 80 ns) variants, are engineered to meet the demands of modern power electronics. They combine fast reverse recovery, low leakage current, and high thermal robustness, making them ideal for applications such as switched-mode power supplies (SMPS), motor drives, welding equipment, UPS systems, and industrial automation—where efficiency, reliability, and thermal stability are critical. Available packages include Clip-bond Flat Power (CFP), D²PAK Real-2-Pin (R2P), and SOD128.
The Clip-bond Flat Power (CFP) packages combine solid copper clip-bonding with a low-profile 1 mm height, delivering up to 60% PCB footprint savings compared to traditional SMx packages. Their low parasitic inductance and high thermal efficiency make them ideal for industrial power designs that demand fast switching, high surge robustness, and compact layouts.
Application case
D²PAK Ultrafast Diodes Enable High-Frequency PV Conversion
In a high-efficiency PV inverter design, the 650V, 30A & 20A ultrafast recovery rectifiers in D²PAK are well-suited for DC/AC inverter stage, specifically for freewheeling and clamping functions around the switching transistors, delivering reliable performance under demanding switching conditions.
- Ultrafast reverse recovery (trr < 80 ns) minimizes switching losses
- High surge current capability ensures robustness during fault events, with IFSM up to 209 A (8.3 ms half sine wave at 25 °C)
- Low leakage current supports long-term reliability, with IR as low as 5 µA at 25 °C and 47 µA at 175 °C, minimizing standby losses
- Real-2-Pin (R2P) D²PAK package provides dedicated Kelvin source connection, separating the power and gate return paths. Significantly lower parasitic inductance enables faster, cleaner switching, lower EMI, and better overall system efficiency.
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