650V IGBT discretes combine high ruggedness, reliable performance, and enhanced power density for demanding industrial applications. The product range includes the H-series (high-speed switching) and M-series (optimized for motor drives).
Robust short-circuit and avalanche ratings ensure durability in harsh operating conditions. The optimized switching behavior simplifies EMI compliance and improving system stability. Available in packages TO-247, D2PAK and SOT186B-1.
Efficiency and Ruggedness Under High Current and Voltage Stress in Welding
The PFC stage in compact and light-to-medium industrial welding systems is particularly demanding due to high power levels, pulsed operation, and harsh environmental conditions. The NGW40T65H3DHP, a fast-switching 650V IGBT with half-rated diode in a TO-247 package, rises to the challenge.
- Stable voltage overshoot improves circuit protection and ensures consistent arc control
- Low junction temperature reduces conduction and switching losses, even under high load cycles
- Minimizes the need for bulky heatsinks or active cooling, enabling more compact design of the welding equipment
- Minimal dV/dt and dI/dt values simplify EMI compliance, crucial for industrial welding standards
- Provides superior switching stability, outperforming comparable devices in rugged welding conditions
Product
Description
Collector current IC [typ] (A)
Package
Datasheet
NGW40T65H3DFP
650 V, 40 A trench field-stop IGBT with half rated silicon diode
40
TO-247-3L
Download datasheet
NGFP15T65M3DFP
650 V, 15 A trench field-stop IGBT with full rated silicon diode
15
SOT186B-1
Download datasheet
NGB30T65M3DFP
650 V, 30 A trench field-stop IGBT with full rated silicon diode
30
D2PAK
Download datasheet
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NPI
Nexperia 650V IGBT discretes
In Nexperia's carrier stored trench-gate advanced field-stop (FS) IGBT portfolio, the 650 V IGBTs deliver high ruggedness reliability and enhanced inverter power density for industrial applications.
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