GaN FETs are the next generation of power switching technology, delivering industry-leading switching speed and efficiency for both low- and high-power applications. Nexperia’s portfolio includes cascode GaN FETs for high-voltage, high-power needs and e-mode GaN FETs for industrial and consumer use, as well as 40V bi-directional options for advanced battery management. These devices ensure low conduction losses, ultra-fast switching speeds, and significant space savings with their compact footprint.
Smarter, Smaller, Smoother: Robotics BLDC Motor with e-mode GaN FETs
Brushless DC (BLDC) motors are essential in robotics for delivering precise motion control, high torque density, and energy efficiency. By integrating 650V enhancement-mode GaN FETs, robotic motor drives benefit from superior switching performance and compact, thermally efficient designs.
- Enhancement Mode (Normally-Off) Operation ensures safe startup and simplifies gate drive design.
- Ultra-High Switching Frequency Capability enables PWM frequencies well beyond typical BLDC motor ranges (20–100 kHz), with GaN supporting up to 500 kHz or more for smoother torque control and quieter operation.
- Very Low Gate Charge (Qg) and Output Charge (Qoss), typical Qg ≈ 2–5 nC, Qoss ≈ 20–45 nC, enabling ultra-fast switching and reduced energy loss in BLDC motor control.
- No Body Diode, eliminating reverse recovery losses for reduced EMI and heat generation.
- Compact DFN Packages (5x6 mm and 8x8 mm) ideal for space-constrained robotic joints and embedded motor controllers.
- Low RDS(on) Options (80 mΩ to 190 mΩ) Offers flexibility in optimizing conduction losses for different motor power levels.
- High Power Density and Thermal Efficiency - up to 11.5 W total power dissipation in compact DFN packages enable miniaturized motor driver designs and reliable thermal performance.
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GaN FETs
Whether for low- or high-power conversion applications, power Gallium Nitride FETs (GaN FETs) are increasingly making their way into mainstream markets.
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