Microchip mSiC™ MOSFET and diode modules, which are available in low-profile, low-stray-inductance and baseplate-less packaging, offer unrivaled ruggedness and performance and increase switching and thermal efficiencies in power electronics. These modules provide flexible options for electrical topology, configuration and materials to maximize your system’s performance. They are easy to integrate into higher-power systems, which simplifies a design, improves optimization and streamlines design validation.
Key Features
- High-temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
- Industry-leading gate oxide stability (< 100 mV Vth shift) and gate oxide lifetime
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
Key Benefits
- Higher switching frequency and efficiency
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Improved cooling requirements that reduce system cost
Microchip Advantage
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched Unclamped Inductive Switching (UIS) avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice

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Custom mSiC™ Power Modules
Microchip has offered customized power modules since 1983. These power modules are made using different sub-elements, most of which are standard and can be reused to build an infinite array of solutions. Microchip offers a complete engineered solution with mix-and-match capabilities in terms of packages, configuration, performance and cost. Their wide range of available technologies and years of expertise will help speed up your development and reduce the size and cost of your design.
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