mSiC™ Schottky Barrier Diodes (SBDs) leverage SiC technology to offer unrivaled ruggedness and performance. Our SiC diodes range from 700V to 3.3 kV in a variety of topologies to give you flexible options for increasing the power density and reliability in your system design. mSiC diodes enable you to create high-voltage power applications with a smaller footprint, lower weight and reduced cost.
Key Features
- No reverse recovery charge
- High reverse current capability
- Low forward voltage
- Low leakage current
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
- High temperature operation (Tj = 175°C)
Key Benefits
- Low switching loss
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Reduced cooling requirements
- Lower system cost
Microchip Advantage
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched UIS avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice
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