Virtual Power Day 2020 - WBG (SiC, GaN)

online, on-demand

Available on-demand.

Original event date: July 1st 2020

The need for equipments to be small and efficient, and the availability of a new generation of cost effective Wide Bandgap (WBG) products are quickly transforming the Power Market. It is a new age for Power Designers having the possibility of adopting new topologies thanks to SiC and GaN switchers, improving system performances, power density and reliability.

Applications for WBG are continuously expanding, and many mechanical and electromechanical devices are turning into electronics because of the ability of SiC and GaN to manage high voltages and high currents efficiently.

In our Virtual Power Day you will be able to learn from power market leaders and Avnet Silica partners about new solutions they are offering. The availability of onsemi and STMicroelectronics Reference Design and Demo will contribute to, and accelerate your next High Power WBG development.

Presentations

• onsemi: Wide Bandgap Semiconductor Application Testing, Translating Tests to Operational Reliability
• STMicroelectronics: Silicon Carbide Devices and suitable Gate Drivers for Industrial Applications

Wide Bandgap Semiconductor Application Testing,  Translating Tests to Operational Reliability 

Wide Bandgap semiconductors such as Silicon Carbide and Gallium Nitride-based power electronics are becoming commercially available across a large spectrum of voltages and current levels. However many customers still are reluctant to move their application designs towards utilizing the capabilities of these new devices. In this Webinar we will show you how parametric testing and reliability investigations of these devices are done at onsemi and the importance of these tests for applications. 

Mehrdad Baghaie Yazdi, onsemi 
Mehrdad Baghaie Yazdi is the head of WBG Application Unit at onsemi working on developing testing and applications around GaN and  SiC based power devices, defining the next generation products and supporting customers in designs based on these novel semiconductors. In October 2013, he joined Fairchild Semiconductors as a senior engineer for device modeling and moved on to establish the interdisciplinary Power Solution Center engaged in high-end power device testing, technology development and customer support from 2014-2016. Prior to that, he was working at the Fraunhofer Institut for Adaptronics while pursuing a doctoral degree in Solid State Engineering at the Technical University of Darmstadt. He has over 45 publications in the field of physics and semiconductors including papers, invited talks and workshop tutorials.

Martin Warnke, onsemi

Daniel Waible, onsemi

Silicon Carbide Devices and suitable Gate Drivers for Industrial Applications

In this session you will learn about the latest Silicon Carbide (SiC) devices from ST, as well as a short term technology roadmap. In addition, some particularities of ST SiC MOSFETs will be discussed, including recommended gate driver device and circuitry,  for optimal operation. Finally, Electrical Vehicle (EV) Chargers, one of the focus applications for SiC devices, will be presented in detail.

• SiC Devices: Product portfolio and Technology Roadmap
• Gate Driver for SiC MOSFETs
• Chargers for Electrical Vehicles: concepts, topologies and suitable power devices

Vladimir Scarpa, STMicroelectronics 
Vladimir Scarpa is  responsible for Industrial Energy applications in EMEA. He has almost 20 years of experience in Power Electronics, including 9 years in the semiconductor industry. His main interests are power devices in Chargers for Electro-Vehicles, Photovoltaic Inverters and Uninterruptable Power Supplies (UPS). He has published several articles in technical conferences  and magazines. He holds also some patents regarding high efficient circuit topologies and innovative semiconductor technologies.

Watch on-demand