The real breakthrough in high voltage switching
Based on the advanced and innovative properties of wide bandgap materials, featuring very low RDS(on) per area, discover the advanced and innovative 3rd generation of SiC MOSFET technology products from STMicroelectronics. Devices combine low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. These new families feature the industry’s highest temperature rating of 200 °C for improved thermal design of power electronics systems.
SiC MOSFETs in mass production
- Gen3 650V, 900V and 1200V
- Gen1 1700V
| Commercial product | VDS [V] | RDS(on) Typ @ 25 ºC [Ω] (Vgs=18V) |
Id [A] | Package (Status/ DS) |
|---|---|---|---|---|
| SCT027H65G3AG | 650 | 0.029 | 60 | H2PAK-7 |
| SCT027W65G3-4AG | HiP247-4 | |||
| SCT040TO65G3 | 0.04 | 35 | TO-LL | |
| SCT040W65G3-4 | 0.045 | 30 | HiP247-4 | |
| SCT055W65G3-4AG | 0.058 | |||
| SCTHS250N65G3 | 0.067 | 237 | STPAK | |
| SCT012W90G3-4AG | 900 | 0.012 | 110 | HiP247 |
| SCT015W120G3-4AG | 1200 | 0.015 | 129 | HiP247-4 |
| SCT025H120G3AG | 0.027 | 55 | H2PAK-7 | |
| SCT025W120G3-4AG | 56 | HiP247-4 | ||
| SCT040H120G3AG | 0.04 | 40 | H2PAK-7 | |
| SCT040W120G3-4 | HiP247-4 | |||
| SCT070H120G3-7 | 0.063 | 30 | H2PAK-7 | |
| SCT070HU120G3AG | HU3PAK | |||
| SCT070W120G3-4 | HiP247-4 |
| 1700V Gen1 SiC MOSFET P/N |
VDS [V] | RDS(on) Typ @ 25 ºC [Ω] (Vgs=20V) |
Id [A] | Package (Status/ DS ) | ||
|---|---|---|---|---|---|---|
| HiP247 | HiP247-LL | HiP247-4LL | ||||
| Tj max= 200°C | ||||||
| SCT1000N170 | 1700 | 1000 | 6 | Buy at Farnell | ||
| SCT20N170 | 0.064 | 25 | Buy at Farnell | |||
The best Rds(on) vs Qg trade-off
SCT025W120G3-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
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Reference designs
STDES-VRECTFD
15 kW, three-level, three-phase Vienna rectifier with digital control for power factor correction
STDES-PFCBIDIR
15 kW, three-phase, three-level AFE bidirectional converter for industrial and electric vehicle DC fast charging applications
STDES-SICGPHU3
The testing board contains a half-bridge (HB) structure based on two high voltage SiC MOSFETs.
Evaluation boards
STEVAL-DPSTPFC1
3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V
eDesignSuite
The eDesignSuite is a comprehensive set of easy-to-use design-aid utilities ready to help you streamline the system development process with a wide range of ST products
Learn MoreSiC MOSFET Finder
The STPOWER MOSFET finder is a mobile application available for Android or iOS offering a user-friendly alternative to searching through the ST online product portfolio, driving the user along a smooth and simple navigation experience using portable devices.
Available packages
ST's STPOWER SiC MOSFET product offer is completed with the state-of-the art packages (HiP247, H2PAK-7, TO-247 long leads) specifically designed for automotive and industrial applications. In addition ST offers all necessary companion devices like isolated gate drivers to complete your power design.
| PowerFLAT 8x8 HV | H2PAK-7 | HiP247 long leads | HiP247 | HiP247-4 | HU3PAK | STPAK | TO-LL |
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Win a free STEVAL-DPSTPFC1 evaluation board
The STEVAL-DPSTPFC1 3.6 kW bridgeless totem pole boost circuit achieves a digital power factor correction (PFC) with inrush current limiter (ICL). It helps you to design an innovative topology with the latest ST power kit devices: a silicon carbide MOSFET (SCTW35N65G2V), a thyristor SCR (TN3050H-12WY), an isolated FET driver (STGAP2S) and a 32-bit MCU (STM32F334).
Submit the form below for a chance to win the STEVAL-DPSTPFC1 evaluation board.
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