Boosting the performance of power converters
SiC diodes are high performance power Schottky rectifiers that feature a silicon carbide substrate. This wide bandgap material enables the design of 650V high-voltage Schottky diodes. They present unbeatable reverse recovery at turn-off and minimal capacitive turn-off behaviour which is independent of temperature. The very low VF series of 650V to 1200V Rectifiers offers the lowest diodes forward voltage drop for optimal efficiency, while 1200 V SiC diodes combine the lowest forward voltage (VF) with state-of-the-art forward surge current robustness.
The very high efficiency behaviour of SiC diodes coupled with ST’s high level of quality ensures the best results for your designs and applications. ST’s 650V SiC diodes take advantage of silicon carbide’s superior physical characteristics over Si only, with 4 times better dynamic characteristics and 15% less forward voltage (VF) versus the fastest 600 V silicon diode. 1200V diodes are ideal for use in high power applications such as solar converters, charging stations, OBC, power supplies, and motor drives.
STPSC30G12
1200 V SiC Power Schottky Diode
The STPSC30G12 SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
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ACEPACK™ SMIT package
Outstanding resistance to moisture and heat for automotive and industrial applications.
The ACEPACK™ SMIT package features a Direct Bond Copper (DBC) metal-isolation-metal substrate placed on the top side of the package to improve thermal coupling with heatsinks. This frees the circuit board PCB of silicon dissipation to allow lower temperature operation and higher design flexibility.
With its low electrical parasitic inductance and low thermal resistance, the package delivers a flexible internal DBC design that enables various electrical circuit solutions from single switch to multi-die topologies in the 1 to 50kW power range. Its molding compound offers outstanding resistance to moisture and heat for automotive and industrial applications.
Main characteristics:
- High efficiency of the power converter (thanks to low forward conduction and switching losses)
- High power integration with dual diodes for reduced PCB form factor
- Significant reduction of power converter size and cost
- Low EMC impact, for simplified certification and reduced time-to-market
- Natural high robustness ensuring very high reliability
- 650V
- 1200V
| SiC Rectifiers P/N | VRRM (V) | IF (AV) | VF (V) max (per diode) @ I0 (TJ = 25 °C) |
Package | Buy Now |
|---|---|---|---|---|---|
| STPSC10065DLF | 650 | 10 A | 1,45 | PowerFLAT 8x8 HV | Buy at Farnell |
| STPSC8065D | 8 A | TO-220AC and TO-220AC Ins | Buy at Farnell | ||
| STPSC10065D | 10 A | Buy at Farnell | |||
| STPSC12065D | 12 A | Buy at Farnell | |||
| STPSC20065D | 20 A | Buy at Farnell | |||
| STPSC20065DI | 20 A | Buy at Farnell | |||
| STPSC20065GY-TR | 20 A | D2PAK | Buy at Farnell | ||
| STPSC10065G2 | 10 A | D2PAK HV | |||
| STPSC12065G2 | 12 A | Buy at Farnell | |||
| STPSC20065CWL | 2 x 10 A | TO-247 and TO-247 LL | |||
| STPSC40065CW | 2 x 20 A | Buy at Farnell | |||
| STPSC2H065B | 2 A | 1,55 | DPAK | Buy at Farnell | |
| STPSC4H065DLF | 4 A | PowerFLAT 8x8 HV | Buy at Farnell | ||
| STPSC6H065DLF | 6 A | Buy at Farnell | |||
| STPSC8H065DLF | 8 A | Buy at Farnell | |||
| STPSC10H065DLF | 10 A | Buy at Farnell | |||
| STPSC4H065B | 4 A | 1,75 | DPAK | Buy at Farnell | |
| STPSC6H065B | 6 A | Buy at Farnell | |||
| STPSC8H065B | 8 A | Buy at Farnell | |||
| STPSC10H065B | 10 A | Buy at Farnell | |||
| STPSC6TH13TI | 2 x 3 A | TO-220AB and TO-220AB Ins | Buy at Farnell | ||
| STPSC8H065CT | 2 x 4 A | ||||
| STPSC8TH13TI | 2 x 4 A | Buy at Farnell | |||
| STPSC10TH13TI | 2 x 5 A | Buy at Farnell | |||
| STPSC12H065CT | 2 x 6 A | Buy at Farnell | |||
| STPSC16H065CT | 2 x 8 A | Buy at Farnell | |||
| STPSC20H065CT | 2 x 10 A | ||||
| STPSC4H065D | 4 A | TO-220AC and TO-220AC Ins | Buy at Farnell | ||
| STPSC4H065DI | 4 A | Buy at Farnell | |||
| STPSC6H065D | 6 A | Buy at Farnell | |||
| STPSC6H065DI | 6 A | Buy at Farnell | |||
| STPSC8H065D | 8 A | Buy at Farnell | |||
| STPSC8H065DI | 8 A | ||||
| STPSC10H065D | 10 A | Buy at Farnell | |||
| STPSC10H065DI | 10 A | Buy at Farnell | |||
| STPSC12H065D | 12 A | ||||
| STPSC10H065G2 | 10 A | D2PAK HV | |||
| STPSC20H065CW | 2 x 10 A | TO-247 | Buy at Farnell |
| SiC Rectifiers P/N | VRRM (V) | IF (AV) | VF (V) max (per diode) @ I0 (TJ = 25 °C) |
Package | Buy Now |
|---|---|---|---|---|---|
| STPSC2H12D | 1200 | 2 A | 1,50 | TO-220AC | Buy at Farnell |
| STPSC5H12D | 5 A | Buy at Farnell | |||
| STPSC10H12D | 10 A | Buy at Farnell | |||
| STPSC10H12G-TR | 10 A | D2PAK | Buy at Farnell | ||
| STPSC10H12GY | 10 A | Buy at Farnell | |||
| STPSC10H12B2 | 10 A | DPAK HV | Buy at Farnell | ||
| STPSC10H12G2 | 10 A | D2PAK HV | Buy at Farnell | ||
| STPSC10H12CWL | 2x5 A | TO-247 LL | Buy at Farnell | ||
| STPSC15H12D | 15 A | TO-220AC | Buy at Farnell | ||
| STPSC15H12G2 | 15 A | D2PAK HV | Buy at Farnell | ||
| STPSC15H12WL | 15 A | DO-247 LL | Buy at Farnell | ||
| STPSC20H12CWL | 2 x 10 A | TO-247 LL | Buy at Farnell | ||
| STPSC20H12G | 20 A | D2PAK | Buy at Farnell | ||
| STPSC20H12G2 | 20 A | D2PAK HV | Buy at Farnell | ||
| STPSC20H12D | 20 A | TO-220AC | Buy at Farnell | ||
| STPSC30G12WL(1) | 30 A | DO-247 LL | Buy at Farnell | ||
| STPSC30H12CWL | 2 x 15 A | TO-247 LL | Buy at Farnell | ||
| STPSC40H12CWL | 2 x 20 A | Buy at Farnell |
(1) Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
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