Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicle
Wide Band Gap technologies provide advanced performance:
- Faster Switching
- Lower Power Losses
- Increased Power Density
- Higher Operating Temperatures
This performance is aligned with future market demands and trends:
- Higher Efficiency
- Compact Solutions
- Lower Weight
- Reduced System Cost
- Increased Reliability
Applications
- Solar and Wind Power
- Vehicle Electrification
- Motor Drive
- Cloud Computing
- EV Charging
- 5G Communication
onsemi’s SiC portfolio comprising:
onsemi provides a unique Ecosystem focused around WBG solutions
- SiC Diodes geared towards ruggedness
- SiC MOSFETs geared towards ruggedness and speed
- Drivers designed for WBG devices
- Physical and Scalable design modeling of SiC and GaN power devices
- Diodes
- IGBTs
- Modules
- MOSFETs
- Drivers
- GaN
The portfolio of EliteSiC diodes from onsemi includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
Product family
1200 V SiC Diodes
onsemi's portfolio of 1200 V EliteSiC diodes1700 V SiC Diodes
onsemi's portfolio of 1700 V EliteSiC diodes
Product news
| Industrial | Automotive | Configuration | VRRM (V) | IF(ave) (A) | VV(Max) (V) | Package Type |
|---|---|---|---|---|---|---|
| FFSB0665B | FFSB0665B-F085 | Single | 650 | 8 | 1.7 | D2PAK2 (TO-263-2L) |
| FFSB2065B | FFSB2065B-F085 | Single | 650 | 20 | 1.7 | D2PAK2 (TO-263-2L) |
| FFSB3065B | FFSB3065B-F085 | Single | 650 | 30 | 1.7 | D2PAK2 (TO-263-2L) |
| FFSD0665B | FFSD0665B-F085 | Single | 650 | 9.1 | 1.7 | DPAK-3 / TO-252-3 |
| FFSD1065B | FFSD1065B-F085 | Single | 650 | 13.5 | 1.7 | DPAK-3 / TO-252-3 |
| FFSH2065A | Single | 650 | 20 | 1.75 | TO-247-2 | |
| FFSH2065ADN-F155 | Dual Common Cathode | 650 | 20 | 1.75 | TO-247-3 | |
| FFSH2065BDN-F085 | Dual Common Cathode | 650 | 20 | 1.7 | TO-247-3 | |
| FFSH2065B-F085 | Single | 650 | 20 | 1.7 | TO-247-2LD | |
| FFSH3065B | FFSH3065B-F085 | Single | 650 | 30 | 1.7 | TO-247-2LD |
| FFSM0665B | Single | 650 | 6 | 1.7 | PQFN-4 | |
| FFSM0865B | Single | 650 | 8 | 1.7 | PQFN-4 | |
| FFSM1065B | Single | 650 | 10 | 1.7 | PQFN-4 | |
| FFSM2065B | Single | 650 | 20 | 1.7 | PQFN-4 | |
| FFSP1065B | FFSP1065B-F085 | Single | 650 | 11 | 1.7 | TO-220-2 |
| FFSP2065B | FFSP2065B-F085 | Single | 650 | 22.5 | 1.7 | TO-220-2 |
| FFSB10120A | FFSB10120A-F085 | Single | 1200 | 10 | 1.75 | D2PAK2 (TO-263-2L) |
| FFSB20120A | FFSB20120A-F085 | Single | 1200 | 20 | 1.75 | D2PAK2 (TO-263-2L) |
| FFSH10120A | FFSH10120A-F085 | Single | 1200 | 10 | 2.4 | TO-247-2 |
| FFSH20120A | FFSH20120A-F085 | Single | 1200 | 20 | 1.75 | TO-247-2 |
| FFSH20120ADN-F155 | FFSH20120ADN-F085 | Single | 1200 | 20 | 1.75 | TO-247-3 |
| FFSH40120ADN-F155 | FFSH40120ADN-F085 | Single | 1200 | 40 | 1.75 | TO-247-3 |
| NDSH20120C | NVDSH20120C | Dual Common Cathode | 1200 | 20 | 1.75 | TO-247-2LD |
| NDSH50120C | NVDSH50120C | Dual Common Cathode | 1200 | 50 | 1.75 | TO-247-2LD |
| NDSH10170A | Single | 1700 | 10 | 1.75 | TO-247-2LD | |
| NDSH25170A | Single | 1700 | 35 | 1.75 | TO-247-2LD |
Product news
| Product | Description | Package |
|---|---|---|
| AFGH75T65SQ | Automotive IGBT with SiC copack diode, 650V, 75A | TO-247-3LD |
| AFGHL75T65SQDC | Automotive IGBT with SiC copack diode, 650V, 75A | TO-247-3LD |
| AFGHL50T65SQDC | Automotive Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD | TO-247-3LD |
onsemi EliteSiC Modules contain SiC MOSFETs and SiC diodes. The boost modules are used in DC-DC stages of solar inverters. These modules also use the onsemi EliteSiC MOSFETs and EliteSiC diodes with voltage ratings of 1200 V.
Si/SiC Hybrid Modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar inverters, energy storage systems and uninterruptible power supplies.
Product news
| Industrial | Description | Package |
|---|---|---|
| NXH006P120MNF2 | SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package | PIM36 56.7x42.5 (PRESS FIT) |
| NXH010P120MNF1 | SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET Press-fit pins, Nickel Plated | PIM18 33.8x42.5 (PRESS FIT) |
| NXH100B120H3Q0 | Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. Solder pins, TIM | Q0 |
| NXH200T120H3Q2 | Si/SiC Hybrid Module, Split T-Type NPC inverter Solder pins | Q2 |
| NXH200T120H3Q2F2STNG | Si/SiC Hybrid Module, Split T-Type NPC inverter Solder pin, Thermal Interface Material and Ni-plated DBC | Q2 |
| NXH240B120H3Q1 | Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode Press-fit pins | Q1 |
| NXH300B100H4Q2F2 | Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode | Q2 |
| NXH350N100H4Q2F2P1G | SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode Press-fit pins | Q2 |
| NXH400N100H4Q2F2 | SiC Hybrid Module, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode Solder pins | Q2 |
| NXH40B120MNQ0 | Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC | Q0 |
| NXH40B120MNQ1 | Full SiC MOSFET Module, Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC | Q1 |
| NXH450B100H4Q2 | Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode Solder pins | Q2 |
| NXH80B120MNQ0 | Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC | Q0 |
The onsemi EliteSiC MOSFET portfolio is designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.
Product family
900 V SiC MOSFETs
onsemi's portfolio of 900 V EliteSiC MOSFETs1200 V SiC MOSFETs
onsemi's portfolio of 1200 V EliteSiC MOSFETs
Product news
| Industrial | Automotive | Blocking Voltage BVDSS (V) | ID(max) (A) | RDS(on) Typ @ 25°C (mΩ) | Package Type |
|---|---|---|---|---|---|
| NTBG015N065SC1 | NVBG015N065SC1 | 650 | 176 | 15.3 | D2PAK7 (TO-263-7L HV) |
| NTHL015N065SC1 | NVHL015N065SC1 | 650 | 163 | 15 | TO-247-3LD |
| NTH4L015N065SC1 | 650 | 164 | 15.6 | TO-247-4 | |
| NVH4L015N065SC1 | 650 | 142 | 12 | TO-247-4 | |
| NTBG045N065SC1 | NVBG045N065SC1 | 650 | 74 | 43.5 | D2PAK7 (TO-263-7L HV) |
| NTHL045N065SC1 | NVHL045N065SC1 | 650 | 66 | 42 | TO-247-3LD |
| NTH4L045N065SC1 | NVH4L045N065SC1 | 650 | 66 | 48.8 | TO-247-4 |
| NVH4L018N075SC1 | 750 | 140 | 13.5 | TO-247-4 | |
| NTBG020N090SC1 | NVBG020N090SC1 | 900 | 112 | 20 | D2PAK7 (TO-263-7L HV) |
| NTHL020N090SC1 | NVHL020N090SC1 | 900 | 118 | 20 | TO-247-3LD |
| NTH4L020N090SC1 | NVH4L020N090SC1 | 900 | 148 | 20 | TO-247-4 |
| NTBG060N090SC1 | NVBG060N090SC1 | 900 | 44 | 60 | D2PAK7 (TO-263-7L HV) |
| NTHL060N090SC1 | NVHL060N090SC1 | 900 | 46 | 60 | TO-247-3LD |
| NTH4L060N090SC1 | NVH4L060N090SC1 | 900 | 67 | 60 | TO-247-4 |
| NTBG020N120SC1 | NVBG020N120SC1 | 1200 | 98 | 20 | D2PAK7 (TO-263-7L HV) |
| NTHL020N120SC1 | NVHL020N120SC1 | 1200 | 103 | 20 | TO-247-3LD |
| NTH4L020N120SC1 | NVH4L020N120SC1 | 1200 | 102 | 20 | TO-247-4 |
| NTBG040N120SC1 | NVBG040N120SC1 | 1200 | 60 | 40 | D2PAK7 (TO-263-7L HV) |
| NTHL040N120SC1 | NVHL040N120SC1 | 1200 | 60 | 40 | TO-247-3LD |
| NTH4L040N120SC1 | NVH4L040N120SC1 | 1200 | 58 | 40 | TO-247-4 |
| NTHL080N120SC1A | NVHL080N120SC1A | 1200 | 31 | 80 | TO-247-3LD |
| NTBG080N120SC1 | NVBG080N120SC1 | 1200 | 30 | 80 | D2PAK7 (TO-263-7L HV) |
| NTH4L080N120SC1 | NVH4L080N120SC1 | 1200 | 29 | 80 | TO-247-4 |
| NTBG160N120SC1 | NVBG160N120SC1 | 1200 | 19.5 | 160 | D2PAK7 (TO-263-7L HV) |
| NTHL160N120SC1 | NVHL160N120SC1 | 1200 | 26 | 160 | TO-247-3LD |
| NTH4L160N120SC1 | NVH4L160N120SC1 | 1200 | 17.3 | 160 | TO-247-4 |
| NTH4L022N120M3S | NVH4L022N120M3S | 1200 | 88 | 22 | TO-247-4 |
The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and EliteSiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi Gate Drivers provide features and benefits that include High system efficiency high reliability.
Product news
| Industrial | Automotive | Description | Package |
|---|---|---|---|
| NCD57000 | NCV57000 | Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation | SOIC-16W |
| NCD57001 | NCV57001 | Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation | SOIC-16W |
| NCD57001F | NCV57001F | Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation | SOIC-16W |
| NCD5700 | NCV5700 | IGBT Gate Drivers, High-Current, Stand-Alone | SOIC-16 |
| NCD5701 | NCV5701 | IGBT Gate Drivers, High-Current, Stand-Alone | SOIC-8 |
| NCD5702 | NCV5702 | IGBT Gate Driver, High-Current | SOIC-16 |
| NCD5703 | NCV5703 | IGBT Gate Drivers, High-Current, Stand-Alone, Non-inverting | SOIC-8 |
| NCD5705 | NCV5705 | IGBT Gate Drivers, High-Current, Stand-Alone Non-Isolated gate driver with negative gate voltage pin | SOIC-8 |
| NCD57080 | NCV57080 | Isolated High Current Gate Driver Isolated High Current Gate Driver | SOIC-8 |
| NCD57200 | NCV57200 | Half Bridge Gate Driver (Isolated High Side & Non-Isolated Low Side) | SOIC-8 |
| NCD57201 | NCV57201 | Half Bridge Gate Driver (Isolated High Side & Non-Isolated Low Side) | SOIC-8 |
| NCP51705 | NCV51705 | SiC MOSFET Driver, Low-Side, Single 6 A High-Speed | WQFN-24 |
The ideal performance characteristics provided by the portfolio of Gate Drivers from onsemi that enable them meet the requirements of specific applications include Automotive Power Supplies, HEV/EV Traction Inverters, EV Chargers, Resonant converters, Half-bridge and full-bridge converters, Active clamp Flyback converters, Totem pole and more.
Product news
| Product | Description | Package |
|---|---|---|
| NCP51810 | High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches | QFN-15 |
| NCP51820 | High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches | QFN-15 |
Wide Bandgap Semiconductor Application Testing, Translating Tests to Operational Reliability
In this Webinar we will show you how parametric testing and reliability investigations of these devices are done at onsemi and the importance of these tests for applications.
Links & DocumentsWide Band Gap Ecosystem White Paper Application Notes Online Seminars
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