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onsemi Wide Band Gap Technology – Enabling Mega Trend Applications

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Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicle

The Wide Band Gap (WBG) materials will power future applications for high performance in areas such as vehicle electrification, solar and wind power, cloud computing, EV (electric vehicle) charging, 5G communications and many more. onsemi is contributing to the development of universal standards to help advance the adoption of Wide Band Gap (WBG) power technologies.

Wide Band Gap technologies provide advanced performance:

  • Faster Switching
  • Lower Power Losses
  • Increased Power Density
  • Higher Operating Temperatures

This performance is aligned with future market demands and trends:

  • Higher Efficiency
  • Compact Solutions
  • Lower Weight
  • Reduced System Cost
  • Increased Reliability
onsemi Wide Band Gap technology product sample image

 

Applications

  • Solar and Wind Power
  • Vehicle Electrification
  • Motor Drive
  • Cloud Computing
  • EV Charging
  • 5G Communication

onsemi’s SiC portfolio comprising:

onsemi provides a unique Ecosystem focused around WBG solutions

  • SiC Diodes geared towards ruggedness 
  • SiC MOSFETs geared towards ruggedness and speed
  • Drivers designed for WBG devices
  • Physical and Scalable design modeling of SiC and GaN power devices

 

  • Diodes
  • IGBTs
  • Modules
  • MOSFETs
  • Drivers
  • GaN

The portfolio of EliteSiC diodes from onsemi includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

 

Product family

650 V SiC Diodes

onsemi's portfolio of 650 V EliteSiC diodes

 

View all SiC Diodes

1200 V SiC Diodes

onsemi's portfolio of 1200 V EliteSiC diodes

1700 V SiC Diodes

onsemi's portfolio of 1700 V EliteSiC diodes

 

Product news

Industrial Automotive Configuration VRRM (V) IF(ave) (A) VV(Max) (V) Package Type
FFSB0665B FFSB0665B-F085 Single 650 8 1.7 D2PAK2 (TO-263-2L)
FFSB2065B FFSB2065B-F085 Single 650 20 1.7 D2PAK2 (TO-263-2L)
FFSB3065B FFSB3065B-F085 Single 650 30 1.7 D2PAK2 (TO-263-2L)
FFSD0665B FFSD0665B-F085 Single 650 9.1 1.7 DPAK-3 / TO-252-3
FFSD1065B FFSD1065B-F085 Single 650 13.5 1.7 DPAK-3 / TO-252-3
FFSH2065A   Single 650 20 1.75 TO-247-2
FFSH2065ADN-F155   Dual Common Cathode 650 20 1.75 TO-247-3
  FFSH2065BDN-F085 Dual Common Cathode 650 20 1.7 TO-247-3
  FFSH2065B-F085 Single 650 20 1.7 TO-247-2LD
FFSH3065B FFSH3065B-F085 Single 650 30 1.7 TO-247-2LD
FFSM0665B   Single 650 6 1.7 PQFN-4
FFSM0865B   Single 650 8 1.7 PQFN-4
FFSM1065B   Single 650 10 1.7 PQFN-4
FFSM2065B   Single 650 20 1.7 PQFN-4
FFSP1065B FFSP1065B-F085 Single 650 11 1.7 TO-220-2
FFSP2065B FFSP2065B-F085 Single 650 22.5 1.7 TO-220-2
FFSB10120A FFSB10120A-F085 Single 1200 10 1.75 D2PAK2 (TO-263-2L)
FFSB20120A FFSB20120A-F085 Single 1200 20 1.75 D2PAK2 (TO-263-2L)
FFSH10120A FFSH10120A-F085 Single 1200 10 2.4 TO-247-2
FFSH20120A FFSH20120A-F085 Single 1200 20 1.75 TO-247-2
FFSH20120ADN-F155 FFSH20120ADN-F085 Single 1200 20 1.75 TO-247-3
FFSH40120ADN-F155 FFSH40120ADN-F085 Single 1200 40 1.75 TO-247-3
NDSH20120C NVDSH20120C Dual Common Cathode 1200 20 1.75 TO-247-2LD
NDSH50120C NVDSH50120C Dual Common Cathode 1200 50 1.75 TO-247-2LD
NDSH10170A   Single 1700 10 1.75 TO-247-2LD
NDSH25170A   Single 1700 35 1.75 TO-247-2LD

View Products

Product news

Product Description Package
AFGH75T65SQ Automotive IGBT with SiC copack diode, 650V, 75A TO-247-3LD
AFGHL75T65SQDC Automotive IGBT with SiC copack diode, 650V, 75A TO-247-3LD
AFGHL50T65SQDC Automotive Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD TO-247-3LD

onsemi EliteSiC Modules contain SiC MOSFETs and SiC diodes. The boost modules are used in DC-DC stages of solar inverters. These modules also use the onsemi EliteSiC MOSFETs and EliteSiC diodes with voltage ratings of 1200 V.

Si/SiC Hybrid Modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar inverters, energy storage systems and uninterruptible power supplies.

 

Product news

Industrial Description Package
NXH006P120MNF2 SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package PIM36 56.7x42.5 (PRESS FIT)
NXH010P120MNF1 SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET Press-fit pins, Nickel Plated PIM18 33.8x42.5 (PRESS FIT)
NXH100B120H3Q0 Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. Solder pins, TIM Q0
NXH200T120H3Q2 Si/SiC Hybrid Module, Split T-Type NPC inverter  Solder pins Q2
NXH200T120H3Q2F2STNG Si/SiC Hybrid Module, Split T-Type NPC inverter  Solder pin, Thermal Interface Material and Ni-plated DBC Q2
NXH240B120H3Q1 Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode Press-fit pins Q1
NXH300B100H4Q2F2 Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode Q2
NXH350N100H4Q2F2P1G SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode Press-fit pins Q2
NXH400N100H4Q2F2 SiC Hybrid Module, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode Solder pins Q2
NXH40B120MNQ0 Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC Q0
NXH40B120MNQ1 Full SiC MOSFET Module, Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC Q1
NXH450B100H4Q2 Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode Solder pins Q2
NXH80B120MNQ0 Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Nickel-plated DBC Q0

View Products

The onsemi EliteSiC MOSFET portfolio is designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.

 

Product family

650 V SiC MOSFETs

onsemi's portfolio of 650 V EliteSiC MOSFETs

 

View All FETs

900 V SiC MOSFETs

onsemi's portfolio of 900 V EliteSiC MOSFETs

1200 V SiC MOSFETs

onsemi's portfolio of 1200 V EliteSiC MOSFETs

 

Product news

Industrial Automotive Blocking Voltage BVDSS (V) ID(max) (A) RDS(on) Typ @ 25°C (mΩ) Package Type
NTBG015N065SC1 NVBG015N065SC1 650 176 15.3 D2PAK7 (TO-263-7L HV)
NTHL015N065SC1 NVHL015N065SC1 650 163 15 TO-247-3LD
  NTH4L015N065SC1 650 164 15.6 TO-247-4
  NVH4L015N065SC1 650 142 12 TO-247-4
NTBG045N065SC1 NVBG045N065SC1 650 74 43.5 D2PAK7 (TO-263-7L HV)
NTHL045N065SC1 NVHL045N065SC1 650 66 42 TO-247-3LD
NTH4L045N065SC1 NVH4L045N065SC1 650 66 48.8 TO-247-4
  NVH4L018N075SC1 750 140 13.5 TO-247-4
NTBG020N090SC1 NVBG020N090SC1 900 112 20 D2PAK7 (TO-263-7L HV)
NTHL020N090SC1 NVHL020N090SC1 900 118 20 TO-247-3LD
NTH4L020N090SC1 NVH4L020N090SC1 900 148 20 TO-247-4
NTBG060N090SC1 NVBG060N090SC1 900 44 60 D2PAK7 (TO-263-7L HV)
NTHL060N090SC1 NVHL060N090SC1 900 46 60 TO-247-3LD
NTH4L060N090SC1 NVH4L060N090SC1 900 67 60 TO-247-4
NTBG020N120SC1 NVBG020N120SC1 1200 98 20 D2PAK7 (TO-263-7L HV)
NTHL020N120SC1 NVHL020N120SC1 1200 103 20 TO-247-3LD
NTH4L020N120SC1 NVH4L020N120SC1 1200 102 20 TO-247-4
NTBG040N120SC1 NVBG040N120SC1 1200 60 40 D2PAK7 (TO-263-7L HV)
NTHL040N120SC1 NVHL040N120SC1 1200 60 40 TO-247-3LD
NTH4L040N120SC1 NVH4L040N120SC1 1200 58 40 TO-247-4
NTHL080N120SC1A NVHL080N120SC1A 1200 31 80 TO-247-3LD
NTBG080N120SC1 NVBG080N120SC1 1200 30 80 D2PAK7 (TO-263-7L HV)
NTH4L080N120SC1 NVH4L080N120SC1 1200 29 80 TO-247-4
NTBG160N120SC1 NVBG160N120SC1 1200 19.5 160 D2PAK7 (TO-263-7L HV)
NTHL160N120SC1 NVHL160N120SC1 1200 26 160 TO-247-3LD
NTH4L160N120SC1 NVH4L160N120SC1 1200 17.3 160 TO-247-4
NTH4L022N120M3S NVH4L022N120M3S 1200 88 22 TO-247-4

The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and EliteSiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi Gate Drivers provide features and benefits that include High system efficiency high reliability.

 

Product news

Industrial Automotive Description Package
NCD57000 NCV57000 Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation SOIC-16W
NCD57001 NCV57001 Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation SOIC-16W
NCD57001F NCV57001F Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation SOIC-16W
NCD5700 NCV5700 IGBT Gate Drivers, High-Current, Stand-Alone SOIC-16
NCD5701 NCV5701 IGBT Gate Drivers, High-Current, Stand-Alone SOIC-8
NCD5702 NCV5702 IGBT Gate Driver, High-Current SOIC-16
NCD5703 NCV5703 IGBT Gate Drivers, High-Current, Stand-Alone, Non-inverting SOIC-8
NCD5705 NCV5705 IGBT Gate Drivers, High-Current, Stand-Alone Non-Isolated gate driver with negative gate voltage pin SOIC-8
NCD57080 NCV57080 Isolated High Current Gate Driver Isolated High Current Gate Driver SOIC-8
NCD57200 NCV57200 Half Bridge Gate Driver (Isolated High Side & Non-Isolated Low Side) SOIC-8
NCD57201 NCV57201 Half Bridge Gate Driver (Isolated High Side & Non-Isolated Low Side) SOIC-8
NCP51705 NCV51705 SiC MOSFET Driver, Low-Side, Single 6 A High-Speed WQFN-24

The ideal performance characteristics provided by the portfolio of Gate Drivers from onsemi that enable them meet the requirements of specific applications include Automotive Power Supplies, HEV/EV Traction Inverters, EV Chargers, Resonant converters, Half-bridge and full-bridge converters, Active clamp Flyback converters, Totem pole and more.

 

Product news

Product Description Package
NCP51810 High Performance, 150 V Half Bridge Gate Driver for GaN Power Switches QFN-15
NCP51820 High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches QFN-15

 

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