onsemi UG4SC075006K4S
Silicon Carbide (SiC) Combo JFET - EliteSiC, 5.3 mohm, 750V, TO-247-4L
The UG4SC075006K4S "Combo-JFET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications. For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.
Features
- Single digit RDS(on)
- Normally-off capability
- Improved speed control
- Improved parallel device operation (3+FETs)
- Operating temperature: 175°C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- Short circuit rated
Applications
- Solid State / Semiconductor Circuit Breaker
- Solid state / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
End Products
- Circuit Breaker
- Battery Charger
- Solar
- Energy Storage System
- Industrial Power Supply
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onsemi
onsemi SiC JFETs
A SiC JFET is a compelling technology for fast-growing markets positioned to gain share from Silicon-based super-junction (SJ) MOSFETs and other semiconductor solutions such as GaN, in the industrial end-market.
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