onsemi UF3SC120040B7S
Silicon Carbide (SiC) Cascode JFET - EliteSiC, 35 mohm, 1200V, D2PAK-7L
EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads.
Features
- On-resistance RDS(on)
- Maximum operating temperature: 175 °C
- Excellent Reverse Recover
- Low Gate Charge
Applications
- EV Charging
- PV Inverters
- Power Factor Correction Units
- Motor Drives
- Induction heating
End Products
- Electric Vehicle
- Solar Inverter
- AI/Datacenter Power Supply
Links & Documents |
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onsemi SiC JFETs
A SiC JFET is a compelling technology for fast-growing markets positioned to gain share from Silicon-based super-junction (SJ) MOSFETs and other semiconductor solutions such as GaN, in the industrial end-market.
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