onsemi NXH800H120L7QDSG
1200V 800A QDUAL3 MODULE
The NXH800H120L7QDSG is a 1200 V 800 A rated half bridge IGBT power module. The integrated latest onsemi’s Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Key features
- Field Stop Trench 7 IGBTs & Gen.7 Diodes
- 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module
- Isolated Base Plate
- NTC Thermistor
- Solderable Pins
- Low Inductive Layout
Benefits
- Integrated High power Density Field Stop Trench 7 IGBTs with
- Vcesat 20% improved
- Balanced conduction/Switching performance for better efficiency and controllability
- 1750C Qualified
Applications
- eCAV (electric Commercial Construction
- Automation and General Inverter
- Uninterruptible Power Supply
- Energy Storage System
- Agricultural Vehicle
- Solar Central Inverter
Power
IGBTs
onsemi’s IGBT portfolio offers cutting-edge solutions for high-efficiency energy conversion across various applications. The latest offering includes 7th generation field-stop technology, available in power modules and discrete packages.
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