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onsemi NXH160T120L2Q2F2S1

Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A

The NXH160T120L2Q2F2SG is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160 A/1200 V half-bridge IGBTs with inverse diodes, two neutral point 120 A/1200 V rectifiers, two 100 A/650 V neutral point IGBTs with inverse diodes, two half-bridge 60 A/650 V rectifiers and a negative temperature coefficient thermistor (NTC).

 

Features

  • 650 V IGBT specifications: VCE(SAT)= 1.47 V, ESW= 2560 uJ
  • 1200 V IGBT Specifications: VCE(SAT)= 2.15 V, ESW= 4300 uJ
  • Baseplate
  • Solderable Pins
  • T−type Neutral Point Clamped Three−level Inverter Module
  • Thermistor

 

Applications

  • DC-AC Stage
  • Solar Inverters
  • Uninterruptible Power Supplies

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