onsemi NXH160T120L2Q2F2S1
Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A
The NXH160T120L2Q2F2SG is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160 A/1200 V half-bridge IGBTs with inverse diodes, two neutral point 120 A/1200 V rectifiers, two 100 A/650 V neutral point IGBTs with inverse diodes, two half-bridge 60 A/650 V rectifiers and a negative temperature coefficient thermistor (NTC).
Features
- 650 V IGBT specifications: VCE(SAT)= 1.47 V, ESW= 2560 uJ
- 1200 V IGBT Specifications: VCE(SAT)= 2.15 V, ESW= 4300 uJ
- Baseplate
- Solderable Pins
- T−type Neutral Point Clamped Three−level Inverter Module
- Thermistor
Applications
- DC-AC Stage
- Solar Inverters
- Uninterruptible Power Supplies
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