onsemi NXH100B120H3Q0
Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50 A/1200 V IGBTs, two 20 A/1200 V SiC diodes, and two 25 A/1600 V anti-parallel diodes for the IGBTs. Two additional 25 A/1600 V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Features
- IGBT Specifications: VCE(sat)= 1.77 V, ESW= 2200 uJ
- 25 A / 1600 V Bypass and Anti−parallel Diodes
- SiC Rectifier Specification: VF= 1.44 V
- Solder pin and press-fit pin options available
Applications
- MPPT Boost Stage
- Battery Charger Boost Stage
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