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onsemi NCP51705

NCP51705 - SiC MOSFET Driver, Low-Side, Single 6A High-Speed

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized.

For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail. For isolated applications, the NCP51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.

Features

High Peak Output Current with Split Output Stages
Extended Positive Voltage Rating up to 28 V Max
User−adjustable Built−in Negative Charge Pump (-3.3 V to -8 V)
Accessible 5 V Reference / Bias Rail
Adjustable Under−Voltage Lockout
Fast Desaturation Function
QFN24 Package 4 x 4 mm

Benefits

Allow independent Turn−ON/Turn−OFF Adjustment
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn−off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design
Small & Low Parasitic Inductance package

Applications

High Perfomance Inverters
High Power Motor Drivers
Totem Pole PFC

End products

Industrial & Motor Drives
UPS & Solar Inverters
High Power DC Chargers

Part electrical specifications

Product	Compliance	Status	Type	Number of drives	V_in Max (V)	V_CC Max (V)	Drive Source/Sink Typ (mA)	Rise Time (ns)	Fall Time (ns)	t_p Max (ns)	Package type
NCP51705MNTXG	Pb-free/ Halide free	Active	SiC MOSFET	1	N/A	28	6000 / 6000	8	8	50	WQFN-24

Evaluation/development tool information

NCP51705SMDGEVB: The NCP51705 mini board driver is designed to primarily drive SiC MOSFET transistors. The board can be implemented to current or new designs or as a standalone test platform.