onsemi NCP51561
NCP51561 – 5kV Isolated High Speed Dual Channel MOSFET/SiC MOSFET Gate Driver
The NCP5156x are isolated dual-channel gate driver with up to 4.5A/9A source and sink peak current. It is designed for fast switching to drive power MOSFETs power switches.
The NCP5156x offers short and matched propagation delays. Internal functional isolation between the two secondary-side drivers allows a working voltage of up to ~1,200 VDC. The NCP5156x offers other important protection functions such as independent under-voltage lockout for each drivers and disable function.
Features
- Input side isolated from output drivers by 5-kVRMS isolation barrier
- 36 ns Prop Delay & 8 ns Delay Matching per channel
- Common Mode Transient Immunity (CMTI)>200V/ns
- Typical Source/Sink Current Capability
- NCP51561 : 4.5A/9A
- User Programmable Input Logic
- Single or Dual-input modes via ANB
- DISABLE or ENABLE mode
- User Programmable Dead-Time Control
- Different UVLO Threshold options: 5-V,8-V & 17-V
Benefits
- High level of flexibility in design and compatibility with various topologies
- Improved robustness in fast slew rate high voltage and high current applications
- Built-in safety and protection features for applications requiring high isolation levels
Applications
- Isolated Converters in Offline AC-to-DC Power Supplies
- Motor Drive and DC-to-AC Solar Inverters
- HEV and EV On-Board chargers
Product overview
| Product | Description | Package | UVLO | ENA/DIS |
|---|---|---|---|---|
| NCP51561BADWR2G | High current dual isolated MOS driver | SO16WB | 8V | Enable |
| NCP51561BBDWR2G | SOIC16W | 8V | Disable | |
| NCP51561DADWR2G | SO16WB | 17V | Enable | |
| NCP51561DBDWR2G | SOIC16W | 17V | Disable |
Development board
- SECO-NCP51561BADWR2G-GEVB - Application daughter-card for NCP51561 5 kV isolated half-bridge gate driver
Application diagram

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