onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs
SiC MOSFETs system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Features
- TO247-4LD package for low common source inductance
- 15V to 18V Gate Drive
- New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
- 100% Avalanche Tested
Benefits
- Reduced EON losses
- 18V for best performance; 15V for compatibility with IGBT driver circuits
- Improved power density
- Improved robustness to unexpected incoming voltage spikes or ringing
Applications
- AC-DC Conversion
- DC-AC Conversion
- DC-DC Conversion
End products
- UPS
- Electric Vehicle Chargers
- Solar Inverters
- Energy Storage Systems
Product overview
Product |
Compliance |
Channel
Polarity |
Configuration |
Blocking
Voltage
BVDSS (V) |
ID(max) (A) |
RDS(on) Typ
@ 25°C (mΩ) |
Qg Total (C) |
Output Capacitance (C) |
Tj Max (°C) |
Package
type |
NTH4L022N120M3S |
Pb-free/
Halide free/
non AEC-Q and PPAP |
N-Channel |
Single |
1200 |
88 |
22 |
148 |
148 |
175 |
TO-247-4 |
NVH4L022N120M3S |
AEC Qualified/
PPAP Capable/
Pb-free/
Halide free |
N-Channel |
Single |
1200 |
88 |
22 |
148 |
148 |
175 |
TO-247-4 |
silica content library/npi/onsemi/m3s-1200v-sic-mosfets
onsemi M3S 1200V Silicon Carbide (SiC) MOSFETs | Avnet Silica