onsemi EliteSiC M3S MOSFETs with T2PAK Top-Side Cooling
EliteSiC M3S MOSFETs - Thermal limits, not silicon, now constrain SiC power density
EliteSiCTM M3S MOSFETs in the industry-standard T2PAK top-side-cooled package bypass PCB thermal constraints while preserving low stray inductance for high-voltage automotive and industrial designs.
Thermal Bottleneck Is the Real Limiter
As power density increases in EV, solar, and industrial systems, traditional SiC packages force designers to trade switching performance against thermal efficiency and layout flexibility.
- Bottom-cooled SMD packages rely on the PCB for heat removal
- Through-hole packages offer cooling but introduce large commutation loops
Engineers need a package that delivers efficient heat extraction without sacrificing electrical performance.
The EliteSiCTM M3S MOSFETs in the industry-standard T2PAK package combine:
- Direct top-side thermal coupling to a heatsink or cold plate
- A leadless surface-mount design that minimizes parasitic inductance
- Compatibility with compact, high-density layouts
This enables designers to achieve cooler operation, higher power density, and improved reliability in demanding high-voltage applications.
Key system-level benefits enabled by T2PAK
- Superior Thermal Performance
- Low Stray Inductance, Faster Switching
- Design Flexibility for High-Density Systems
- Reliability in Thermally Constrained Designs
Why Top-Side Cooling Matters in Practice
- Direct heatsink contact removes the PCB from the primary thermal path
- Measured thermal resistance improvements are achieved through optimized mechanical clamping and TIM compression
- Commutation loop optimization is easier with top-side cooled devices, enabling compact half-bridge layouts with reduced loop inductance
These characteristics make T2PAK particularly effective for thermally constrained, high-speed SiC designs.
Applications
Designed for High-Power, High-Voltage Applications
EliteSiCTM M3S MOSFETs in T2PAK are well suited for:
- Direct Electric vehicles: traction inverters, on-board chargers, DC-DC
- Solar & energy storage: high-efficiency inverters
- Industrial power: SMPS, drives, power conversion systems
These applications benefit directly from improved thermal headroom and layout flexibility.
Featured products
| Part number | Drain to Source Voltage (Vdss) |
Current - Continuous Drain (Id) @ 25°C |
Rds On (Max) @ Id, Vgs |
Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|
| NTT2023N065M3S | 650 V | 72A (Tc) | 32.6mOhm @ 21A, 18V |
74 nC @ 18 V |
| NVT2023N065M3S | 650 V | 72A (Tc) | 32.6mOhm @ 21A, 18V |
74 nC @ 18 V |
| NTT2016N065M3S | 650 V | 85A (Tc) | 23.4mOhm @ 29A, 18V |
100 nC @ 18 V |
| NTT2012N065M3S | 650 V | 112A (Tc) | 16.8mOhm @ 40A, 18V |
135 nC @ 18 V |
| NVT2016N065M3S | 650 V | 85A (Tc) | 23.4mOhm @ 29A, 18V |
100 nC @ 18 V |
| NVT2012N065M3S | 650 V | 112A (Tc) | 16.8mOhm @ 40A, 18V |
135 nC @ 18 V |
- NTT2023N065M3S
- NVT2023N065M3S
- NTT2016N065M3S
- NTT2012N065M3S
- NVT2016N065M3S
- NVT2012N065M3S
NTT2023N065M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, T2PAK (Top Cool Package)
The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Product Features
- Top Cool SMD Package
- T2PAK Package with Kelvin source configuration
- Ultra Low Gate Charge (QG(tot) = 69 nC)
- High Speed Switching with Low Capacitance (Coss = 153 pF)
Applications
- Industrial
- Energy Infrastructure
- Industrial Motor Drive
- AI Data Center
End Products
- UPS / ESS
- Solar
- EV Charger
- Power Supply Unit (PSU)
NVT2023N065M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, T2PAK
EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. The T2PAK allows heat to be drawn directly into the heatsink rather than being forced into the main circuit board.
Product Features
- New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
- Qualified for automotive per AEC-Q101
- 15V to 18V gate drive
- Devices are Pb-free and RoHS compliant
Applications
- Automotive On-Board Charger (OBC)
- DC/DC converters for EV/HEV
End Products
- Automotive EV/HEV
NTT2016N065M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 16 mohm, 650 V, M3S, T2PAK (Top Cool Package)
The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Product Features
- Top Cool SMD Package
- T2PAK Package with Kelvin source configuration
- Ultra Low Gate Charge (QG(tot) = 69 nC)
- High Speed Switching with Low Capacitance (Coss = 153 pF)
Applications
- Industrial
- Energy Infrastructure
- Industrial Motor Drive
- AI Data Center
End Products
- UPS / ESS
- Solar
- EV Charger
- Power Supply Unit (PSU)
NTT2012N065M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M3S, T2PAK (Top Cool Package)
The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Product Features
- Top Cool SMD Package
- T2PAK Package with Kelvin source configuration
- Ultra Low Gate Charge (QG(tot) = 69 nC)
- High Speed Switching with Low Capacitance (Coss = 153 pF)
Applications
- Industrial
- Energy Infrastructure
- Industrial Motor Drive
- AI Data Center
End Products
- UPS / ESS
- Solar
- EV Charger
- Power Supply Unit (PSU)
NVT2016N065M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 16 mohm, 650 V, M3S, T2PAK
EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. The T2PAK allows heat to be drawn directly into the heatsink rather than being forced into the main circuit board.
Product Features
- New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
- Qualified for automotive per AEC-Q101
- 15V to 18V gate drive
- Devices are Pb-free and RoHS compliant
Applications
- Automotive On-Board Charger (OBC)
- DC/DC converters for EV/HEV
End Products
- Automotive EV/HEV
NVT2012N065M3S
Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M3S, T2PAK
EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. The T2PAK allows heat to be drawn directly into the heatsink rather than being forced into the main circuit board.
Product Features
- New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
- Qualified for automotive per AEC-Q101
- 15V to 18V gate drive
- Devices are Pb-free and RoHS compliant
Applications
- Automotive On-Board Charger (OBC)
- DC/DC converters for EV/HEV
End Products
- Automotive EV/HEV
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