onsemi AFGH4L25T120RW

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.

Features

• Extremely Efficient Trench with Field Stop Technology
• Maximum Junction Temperature − TJ = 175°C
• Short Circuit Rated and Low Saturation Voltage
• AEC Q101 qualified
• Tight Parameter distribution
• Low Vcesat
• Low Eoff & Eon
• These Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant

Applications

• HEV-EV PTC heater
• HEV-EV e-compressor