onsemi New 650V Silicon Carbide MOSFETs

onsemi’s new automotive AECQ101 and industrial grade qualified 650 volt (V) SiC MOSFETs are based upon a new wide bandgap material that provides superior switching performance and improved thermals when compared to silicon. This results in improved efficiency at the system level, enhanced power density, reduced electromagnetic interference (EMI) and reduced system size and weight. 

The new generation of SiC MOSFETs employ a novel active cell design combined with advanced thin wafer technology enabling best in class figure of merit Rsp (Rdson*area) for 650 V breakdown voltage. This technology is also optimized around energy loss figure of merits, optimizing performance in automotive and industrial applications. An internal gate resistor (Rg) allows more flexibility to designers eliminating the need to slow down devices artificially with external gate resistors. Higher surge, avalanche capability and short circuit robustness all contribute to enhanced ruggedness that delivers higher reliability and longer device lifetimes.

Features

• High Power Density
• Ultra Low Gate Charge
• Low Effective Output Capacitance
• Low VF (lower conduction losses)
• Leakage stability over temperature range
• 100% UIL Tested
• Higher operating temperature (TJMAX=175ºC)

Benefits

• High Quality
• High Efficiency and Frequency Operation
• Multiple performance / pricing solutions
• Broad array of packaging solutions
• Wide WBG portfolio
• Automotive Qualification AEC-Q101

Applications

• Solar Photo-Voltaic Inverters (PV)
• Power Factor Correctors (PFC)
• Electric / Hybrid Vehicle Chargers
• Uninterruptible Power Supplies (UPS)
• Telecom Power Supplies
• Server Power Supplies

Specifications

DC/DC

NPC Half-Bridge or Full-Bridge

Stacked LLC

 

3-phase PFC

6 Pack Boost

T-NPC Boost

NPC Boost

Vienna