Nexperia E-mode GaN FETs

Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for either low-power 650 V applications or high-power 150 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. Alternatively low-voltage GaN (150 V) devices enable faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.

Features & benefits

• Enhancement mode transistor-normally off power switch​
• Ultra-high switching frequency​
• Leading soft-switching performance​
• No reverse-recovery charge​
• Low gate charge, low output charge​
• High performance (>99% efficiency)​
• Good tight dynamic characteristics​​
• Easy to drive, 0 to 5 V gate drive
• Qualified for industrial applications according to JEDEC Standards

Applications

• 650 V applications
  • Datacom and Telecom (AC/DC and DC/DC)
  • Photovoltaic (PV) micro inverter (DC/AC)
  • Industrial (DC/AC)
  • BLDC / micro servo motor drives
  • LED driver​
  • TV power supply unit (PSU)
• 100/150 V applications
  • 400 V-48 V LLC converter for datacenters
  • 48 V to POL direct conversion​
  • Power supply (AC/DC) fast charging for e-mobility
  • USB-C power delivery fast charging for portables
  • LiDAR (non-automotive)​
  • Class D audio amplifiers

Product portfolio