STMicroelectronics STDRIVEG611
STDRIVEG611 - High voltage and high-speed half-bridge gate driver for GaN power switches
The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.
The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.
The STDRIVEG611 features supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.
The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.
The STDRIVEG611 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.
Features
- High voltage rail up to 600 V
- dV/dt transient immunity ±200 V/ns
- Driver with separated sink and source path for optimal driving:
- 2.4 A and 1.2 Ω sink
- 1.0 A and 3.7 Ω source
- High-side and low-side linear regulators for 6 V gate driving voltage
- Fast high-side startup time: 5 µs
- 45 ns propagation delay, 15 ns minimum output pulse
- High switching frequency (> 1 MHz)
- Embedded 600 V bootstrap diode
- Full support of GaN hard-switching operation
- Comparator for overcurrent detection with Smart Shutdown
- UVLO function on VCC, VHS, and VLS
- Separated logic inputs and shutdown pin
- Fault pin for overcurrent, overtemperature and UVLO reporting
- Stand-by function for low consumption mode
- Separated PGND for Kelvin source driving and current shunt compatibility
- 3.3 V to 20 V compatible inputs with hysteresis and pull-down
Applications
- Motor driver for home appliances, pumps, and compressors
- Factory automation, servo, and industrial drives
- E-bikes and power tools
- Class D audio amplifiers
- DC/DC and resonant converters, PFC, battery charger and adapters
EVLSTDRIVEG611 - Evaluation board for STDRIVEG611 600 V high-speed half-bridge gate driver with 75 mΩ, 650 V e-mode GaN HEMT
The STDRIVEG611 is a high-speed, half-bridge gate driver optimized to drive high-voltage, enhanced mode, GaN HEMTs.
It features separated high current sink/source gate driving pins, integrated LDOs, undervoltage, bootstrap diode, overcurrent protection with SmartShutDown, overtemperature, fault and shutdown pins, and standby to fully support hard switching topologies in a 4x5mm QFN package.
The EVLSTDRIVEG611 board is easy to use and quick and adapt for evaluating the characteristics of the STDRIVEG611 driving the SGT120R65AL 75 mΩ typ., 650 V E-Mode GaN switches in the 5x6 mm QFN package. The EVLSTDRIVEG611 board is also suitable for evaluating the STDRIVEG211 features.
It provides an onboard programmable deadtime generator and a 3.3 V linear voltage regulator to supply external logic like microcontrollers.
Spare footprints are also included to allow customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal.
The EVLSTDRIVEG611 is 56 x 70 mm wide, 2 layers, 2 Oz, FR-4 PCB, resulting in 23 °C/W Rth(J‑A) (equivalent to 46 °C/W for each GaN) in still air to evaluate high power applications.
EVSTDRVG611MC - Three-phase motor control evaluation board based on STDRIVEG611 GaN driver & STM32G431RB
The EVSTDRVG611MC is a three-phase inverter based on the STDRIVEG611 half-bridge GaN gate driver, 75 mΩ 650 V e-mode HEMT GaN SGT120R65AL, and the high-performance STM32G431RBT3 with Arm Cortex®-M4 MCU at 170 MHz.
The board can be used for sensorless field-oriented control (FOC), allowing driving permanent magnet synchronous motors (PMSMs) and brushless DC (BLDC) motors to cover a wide range of applications, such as refrigerator compressors, pumps, fans, and industrial appliances.
The EVSTDRVG611MC is 109 x 110 mm wide, 2 layers, 2 Oz, FR-4 PCB, resulting in overall 8.5 °C/W Rth(J‑A) (equivalent to 50°C/W for each GaN) in still air.
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