STMicroelectronics STDRIVEG610
STDRIVEG610 - High voltage and high-speed half-bridge gate driver for GaN power switches
The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.
The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.
High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG610 optimized for driving high-speed GaN.
The STDRIVEG610 features supply UVLOs tailored to fast startup and low-consumption soft-switching applications, but with full hard switching support and interlocking to avoid cross-conduction conditions. The high-side regulator is characterized by very short wake-up time to maximize the application efficiency during intermittent operation (burst mode).
The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.
The STDRIVEG610 operates in the industrial temperature range, -40 °C to 125 °C.
The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.
Features
- High voltage rail up to 600 V
- dV/dt transient immunity ±200 V/ns
- Driver with separated sink and source path for optimal driving:
- 2.4 A and 1.2 Ω sink
- 1.0 A and 3.7 Ω source
- High-side and low-side linear regulators for 6 V gate driving voltage
- Ultra fast high-side startup time: 300 ns
- 45 ns propagation delay, 15 ns minimum output pulse
- High switching frequency (> 1 MHz)
- Embedded 600 V bootstrap diode
- Full support of GaN hard-switching operation
- UVLO function on VCC, VBO, and VLS
- Separated logic inputs and shutdown pin
- Fault pin for overtemperature and UVLO reporting
- Stand-by function for low consumption mode
- Separated PGND for Kelvin source driving and current shunt compatibility
- 3.3 V to 20 V compatible inputs with hysteresis and pull-down
Tools & software
EVLSTDRIVEG610Q
Evaluation board for STDRIVEG610 600 V high-speed half-bridge gate driver with 75 mΩ, 650 V e-mode GaN HEMT
The STDRIVEG610 is a high-speed, half-bridge gate driver optimized to drive high-voltage, enhanced mode, GaN HEMTs.
It features separated high current sink/source gate driving pins, integrated LDOs, undervoltage, bootstrap diode, high-side fast startup, overtemperature, fault and shutdown pins, and standby to fully support hard switching topologies in a 4x5mm QFN package.
The EVLSTDRIVEG610Q board is easy to use and quick and adapt for evaluating the characteristics of the STDRIVEG610 driving the SGT120R65AL 75 mΩ typ., 650 V E-Mode GaN switches in the 5x6 mm QFN package. The EVLSTDRIVEG610Q board is also suitable for evaluating the STDRIVEG210 features.
It provides an onboard programmable deadtime generator and a 3.3 V linear voltage regulator to supply external logic like microcontrollers.
Spare footprints are also included to allow customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal.
The EVLSTDRIVEG610Q is 56 x 70 mm wide, 2 layers, 1.5 Oz, FR-4 PCB, resulting in overall 24 °C/W Rth(J‑A) (equivalent to 48 °C/W for each GaN) in still air to evaluate high power applications.
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