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Micron Space-qualified NAND Flash

Space-qualified NAND Flash - 256Gb SLC NAND - Industry largest density

Micron MT29F256G08AUCABPB-10ITZ:A  - front side of the chip

The most advanced processors and platforms require high performance memory to meet today's mission requirements.

Memory is not just a component but rather a performance enabler.

 

Key features

  • High-speed 8-bit bus to transfer commands, addresses and data efficiently
  • Asynchronous and synchronous data interfaces for flexible, high-performance operation
  • Five main control signals manage the interface with additional signals for hardware write protection and real-time status monitoring
  • In synchronous mode, control pins adapt to support a bidirectional data strobe (DQS) for even faster data transfers
  • Standard pinout remains consistent across all storage sizes
  • Robust error correction and advanced reliability features provide dependable, long-term performance
  • Synchronous I/O performance
  • Up to synchronous timing mode 5
  • Clock rate: 10ns (DDR)
  • Read/write throughput per pin: 200 MT/s
  • Array performance
  • Read page: 35μs (MAX)
  • Program page: 350μs (TYP)
  • Erase block: 1.5ms (TYP)
  • Leaded ball

 

Specifications

  • Capacity: 256Gb
  • Component Density: 256Gb
  • Speed: 110MHz
  • MT/s: 200MTPS
  • I/O Voltage: 1.8 VOLTS
  • Operating Temp: -40C to +85C
  • Bus Width: x8
  • Part Status Code: Introduction
  • Component Config: 32G x8
  • Dry Pack Qty: 1120
  • Package Dimension (W x L x H) mm: 12.00 x 18.00 x 1.40
  • Tape & Reel Qty: 1000
  • Number of Components: 8
  • Package Type: LEADED
  • Technology: SLC
  • Package: LBGA
  • Family: NAND FLASH

 

Micron SLC NAND: Tested for space’s extreme environment and ready for launch

Spaceborne technologies must withstand harsh environmental conditions to deliver successful mission results. These challenges include extreme temperatures, shock and vibration, vacuum pressure, and radiation exposure from solar energetic particles and galactic cosmic rays.

To verify its radiation-tolerant NAND can meet customers’ requirements, Micron arranges:

  • Extended quality and performance testing, aligned with NASA’s PEM-INST-001 Level 2 flow, which subjects components to a yearlong screening, including extreme temperature cycling, defect inspections and 590 hours of dynamic burn-in to enable spaceflight reliability
  • Radiation characterization for total ionizing dose (TID) testing, aligned with U.S. military standard MIL-STD-883 TM1019 condition D, which measures the cumulative amount of gamma radiation that a product can absorb in a standard operating environment in orbit and remain functional, a measurement that is critical in determining mission life cycle.

Radiation characterization for single event effects (SEE) testing, aligned with the American Society for Testing Materials flow ASTM F1192 and the Joint Electronic Device Engineering Council (JEDEC) standard JESD57. SEE testing evaluates the impact of high-energy particles on semiconductors and verifies that components can operate safely and reliably in harsh radiation environments, reducing the risk of mission failure. This profiling information enables space engineers and architects to design in a way that mitigates the risk and disruption to the mission.

 

 

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Micron Space Press Release

Micron Launches Space-Qualified Portfolio to Power Mission-Critical Data for Aerospace Innovation

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