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Diodes Incorporated SiC Diodes and MOSFETs

SiC - Designed for next-generation applications in green energy, energy storage systems, and electric vehicles.

Diodes Incorporated's SiC products are designed for next-generation applications in green energy, energy storage systems, and electric vehicles. We manufacture these products according to a high standard and ensure their performance, efficiency, and reliability meet expectations. The design-in of these components raises system efficiency and decreases temperature by lowering conduction/switching losses, resulting in the highest possible performance for thermal dissipation.

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SiC Schottky Barrier Diodes (SBDs)
SiC MOSFETs

SiC Schottky Barrier Diodes (SBDs)

Diodes Incorporated has extended its silicon carbide (SiC) portfolio with a series of five high-performance low figure-of-merit (FOM) 650V SiC Schottky diodes.

Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is packaged in the ultra-thermally efficient T-DFN8080-4 and is designed for high-efficiency power switching applications, such as DC-to-DC and AC-toDC conversion, renewable energy, data centers (especially those that process heavy artificial intelligence (AI) workloads), and industrial motor drives.

These SiC Schottky diodes offer superior power switching performance compared to silicon alternatives. They have negligible switching losses due to the absence of reverse recovery current and their low capacitive charge (Q_C), making them suitable for high-speed switching circuits. Their low forward voltage (V_F) minimizes conduction losses and further increases overall power efficiency. These combine to provide an exceptionally low FOM, expressed as:

FOM = Q_C x V_F

The devices’ compact and low-profile T-DFN8080-4 (typ. 8mm x 8mm x 1mm) surface mount package incorporates a large underside heat pad, providing reduced thermal resistance. This benefits circuit designs with increased power density, reduced overall solution size, and a lower cooling budget. T-DFN8080-4 is an ideal alternative for TO252 (DPAK).

Circuit Functions

PFC boost diodes
Reverse-polarity protection
Electrical over-stress protection
Free-wheeling diodes
Snubber circuits

Applications

Power factor correction
AC/DC & DC/DC converters
Solar inverters
Switched-mode power supplies
AI server PSU, data centers
Uninterruptible power supplies
Motor drives

Benefits

These low-loss devices boost power density and efficiency, reducing cooling needs in compact designs.

Exceptionally Low FOM (Q_C x V_F)
Minimal Reverse Leakage Current (I_R = 20µA Max.)
High Temperature Operation up to 175°C
Forward Voltage Positive Temperature Coefficient
High Surge Current Capability
Totally Lead-Free and Fully RoHS Compliant

Product portfolio

VR (V)	Config.	IO (A)	VF (V)	TO252	TO252-2	TO220AC	ITO220AC	TO247-2	TO263AB	DFN8080	TO263-7 (Type D)

650	Single	4	1.5	DSC04A065D1		DSC04A065	DSC04A065FP			DSC04A065LP
		4	1.7	DSC04C065D1		DSC04C065	DSC04C065FP			DSC04C065LP
		6	1.7	DSC06C065D1		DSC06C065	DSC06C065FP
		6	1.5	DSC06A065D1		DSC06A065	DSC06A065FP			DSC06A065LP
		8	1.7	DSC08C065D1		DSC08C065	DSC08C065FP
		8	1.5	DSC08A065D1		DSC08A065 DSC08U065^*Q3	DSC08A065FP			DSC08A065LP
		10	1.7	DSC10C065D1		DSC10C065
		10	1.5	DSC10A065D1		DSC10A065				DSC10A065LP
		12	1.7							DSC12A065LP
		50	1.5								DSC50A065TSCS7Q^*Q3
		60	1.6					DSC60A065PT^*Q3
	Dual	20	1.5	DSC20A065CTL
1200	Single	2	1.7		DSC02120D1	DSC02120	DSC02120FP
		5	1.7		DSC05120D1	DSC05120	DSC05120FP
		10	1.7		DSC10120D1	DSC10120					DSC50A065TSCS7Q^*Q3
	Dual	20						DSC20A120PT(Q)^*Q3	DSC20A120TBQ^*Q1
	Dual	50						DSC50A120PT^*Q3			DSC50A120TSCS7Q^*Q3

SiC MOSFETs

Silicon carbide offers designers unique properties essential in tomorrow’s power electronic systems such as in green energy, energy storage systems, and electric vehicles.

Wide band gap materials such as SiC offer fast switching and low onresistance at higher temperatures and voltages than silicon can offer.

Future electronic systems such as electric vehicles and renewable energy demand ever higher efficiencies at higher power densities. Diodes’ SiC MOSFETs feature robust body diodes that deliver fast switching and low reverse recovery charge, minimizing switching losses at high frequencies. By using the planar manufacturing process, Diodes has created new MOSFETs that offer more robust and reliable performance in automotive applications—and with increased drain
current, junction temperature, and power rating.

Diodes’ innovative packaging solutions include through hole, surface mount and topside cooled. An additional Kelvin sense pin, on T247-4 and TO263-7 packages, allows high speed switching circuits to be performance optimized, enabling even higher power densities.

Diodes’ SiC portfolio includes Schottky Barrier Diodes (SBD) as well as power MOSFETS.

Applications

EV high-power DC-DC converters
EV charging systems
Automotive motor drivers
On-board chargers
Industrial motor drives
Solar inverters
Data center and telecom power supplies
DC-DC converters
Next-generation applications in green energy, energy storage systems, and electric vehicles

Benefits

Low R_DS(ON) and Low Q_G
Low Thermal Resistance Packaging
Kelvin Sense Pin
Robust Body Diode
Qualified to 175°C

Product portfolio

VDS (V)	VGS (±V)	R_DS(ON) Max (mΩ)	TO247-3	TO247-4	TO263-7	TO263-7 (Type D)

900		28.5				DMWSH90H24HTSCS7Q^*Q4
1200	15,4	28.5	DMWSH120H28SM3(Q)	DMWSH120H28SM4(Q)	DMWSH120H28SCT7(Q)	DMWSH120H23STSCS7Q^*Q3
		43	DMWSH120H43SM3(Q)	DMWSH120H43SM4(Q)	DMWSH120H43SCT7(Q)^*Q3
		90			DMWSH120H90SCT7(Q)
		97.5	DMWSH120H90SM3(Q)	DMWSH120H90SM4(Q)
		100		DMWS120H100SM4
	18,4	18	DMWSH120H18HM3	DMWSH120H18HM4(Q)
		23	DMWSH120H23SM3	DMWSH120H23SM4(Q)	DMWSH120H22SCT7
		24	DMWSH120H24SM3^*Q3	DMWSH120H24SM4^*Q3
		37	DMWSH120H37SM3	DMWSH120H37SM4(Q) DMWSH120H38SM4(Q)^*Q3	DMWSH120H36SCT7^*Q3	DMWSH120H36STSCS7Q^*Q3
		80.5	DMWSH120H80SM3 DMWSH120H82HM3^*Q3	DMWSH120H80SM4(Q)^Q4 DMWSH120H82HM4(Q)^Q3	DMWSH120H80SCT7	DMWSH120H80STSCS7Q^*Q3
1700	20,5	850		DMWSH170H850HM4(Q)^*Q3	DMWSH170H850HCT7(Q)^*Q4