STMicroelectronics STPSC30G12
STPSC30G12 - 1200 V, 30 A High surge Silicon Carbide Power Schottky Diode
The STPSC30G12 SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
Features & benefits
- None or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- Operating Tj from -55 °C to 175 °C
- Avalanche energy rated
- ECOPACK2 compliant component
Applications
- Solar inverter
- Boost PFC
- Air conditioning equipment
- UPS power supply
- Telecom / Server power equipment
- HEV/EV OBC (On board battery chargers)
- EV Charging station
Related Documents |
STMicroelectronics
STPOWER SiC MOSFETs and Diodes
STPower SiC MOSFETs and Diodes are based on innovative wide bandgap materials (WBG), that offer higher power density for automotive and industrial applications, enabling you to design more efficient and compact systems than ever.
Have a question? Contact usEmail: |