New Product Introduction

STMicroelectronics SCT040W65G3-4

SCT040W65G3-4 - Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

 

Features & benefits

  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency

 

Applications

  • Switching mode power supply
  • Power supply for renewable energy systems
  • DC/DC converter for EV/HEV

 

 

Related Documents


Have a question? Contact us

Email:
For general questions:
yourmessage@avnet.eu

Local Avnet Silica offices:
Click here to find contact information for your local Avnet Silica team.