New Product Introduction

STMicroelectronics SCT040W120G3-4

SCT040W120G3-4 - Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

 

Features & benefits

  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very high operating junction temperature capability (TJ = 200 °C)

 

Applications

  • Switching mode power supply
  • DC/DC converter
  • Power supply for renewable energy systems

 

 

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