STMicroelectronics SCT040TO65G3
SCT040TO65G3 - Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Features & benefits
- Very fast and robust intrinsic body diode
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- DC/DC converter for EV/HEV
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STPOWER SiC MOSFETs and Diodes
STPower SiC MOSFETs and Diodes are based on innovative wide bandgap materials (WBG), that offer higher power density for automotive and industrial applications, enabling you to design more efficient and compact systems than ever.
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